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    IRFI840G

    Abstract: C-150 IRGIB7B60KD
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original
    PDF 94620B IRGIB7B60KD O-220AB IRFI840G O-220AB IRFI840G C-150 IRGIB7B60KD

    IRFI840G

    Abstract: ic MARKING QG C-150 IRGIB7B60KD
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original
    PDF 94620B IRGIB7B60KD O-220AB O-220AB IRFI840G ic MARKING QG C-150 IRGIB7B60KD

    Untitled

    Abstract: No abstract text available
    Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original
    PDF 94620B IRGIB7B60KD O-220AB O-220AB