Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    94GHZ Search Results

    SF Impression Pixel

    94GHZ Price and Stock

    Infineon Technologies AG MB90594GHZPF-GS-193-ER

    IC MCU 16BIT 256KB MROM 100QFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB90594GHZPF-GS-193-ER Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Infineon Technologies AG MB90594GHZPF-GS-XXX-ER

    IC MCU 16BIT 256KB 100BQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB90594GHZPF-GS-XXX-ER Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Infineon Technologies AG MB90594GHZPFR-GS-XXX-ER

    IC MCU 16BIT 256KB 100BQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB90594GHZPFR-GS-XXX-ER Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Abracon Corporation ACR3705LZ

    Antennas Antennas 4G/LTE Cera mic Chip AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ACR3705LZ Reel 2,700 450
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.02
    • 10000 $2.02
    Buy Now

    Kyocera AVX Components P522304

    Antennas Cellular PCB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI P522304 Reel 1,120 1,120
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.45
    Buy Now

    94GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    inp hemt power amplifier

    Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
    Text: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface


    Original
    CI0402 WR-10 CI0402 inp hemt power amplifier NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier N218 PDF

    inp hemt power amplifier

    Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
    Text: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface


    Original
    EL07-292-601-008 CI0621 WR-10 CI0621 inp hemt power amplifier 100ghz MMIC POWER AMPLIFIER hemt 94GHz PDF

    CGY2108GS

    Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
    Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services


    Original
    500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2 PDF

    10 GHz gunn diode

    Abstract: millimeter gunn diode
    Text: AFC378 G aAs FLIP CHIP S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz typ. . Low capacitance : CT0 = 0.032 pF Extremely rugged. Passivated planar construction. High reproducibility of parasitics. A P PL IC A TI O N S


    OCR Scan
    AFC378 94GHz 26-110GHz) AFC378 10 GHz gunn diode millimeter gunn diode PDF

    missile seeker

    Abstract: AH901 Gunn oscillator InP AH904 seeker AH902
    Text: AH901.AH904 InP G U N N P O W E R G E N E R A T I O N D I O D E S APPLICATIONS FEATURES hign ernciency Local oscillator links missile seeker radars 94GHz operating frequency High CW power level Low FM and AM noise DESCRIPTION M illim eter-wave InP GUNN diodes are vapor


    OCR Scan
    AH901. AH904 94GHz AH901 missile seeker AH901 Gunn oscillator InP AH904 seeker AH902 PDF

    APX378

    Abstract: C116
    Text: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency


    OCR Scan
    APX378 94GHz 94GHz. APX378) APX378 C116 PDF

    Untitled

    Abstract: No abstract text available
    Text: PSHGEC plessey D S3343-13 DA1392 MILLIMETRE WAVE BALANCED MIXER The DA1392 is a Millimetre Wave Balanced Mixer. FEATURES • 90 to 98GHz Coverage Available ELECTRICAL CHARACTERISTICS @ 25°C P aram eter Signal Frequency Range Signal Bandwidth IF Range Conversion Loss


    OCR Scan
    S3343-13 DA1392 DA1392 98GHz 94GHz 10dBm 150mW UG387/U PDF

    Untitled

    Abstract: No abstract text available
    Text: PjpH G E C P L E S S E Y DS3341-1.3 DA1390 Series MILLIMETRE WAVE BALANCED MIXERS The D A 1390 S eries of devices are M illim etre W ave Balanced Mixers. ELECTRICAL CHARACTERISTICS @ 25°C FEATURES • 90 to 98GHz Coverage Available ■ Low Conversion Loss


    OCR Scan
    DS3341-1 DA1390 98GHz 94GHz DA1390 DA1390-1 DA1390-2 500MHz 200MHz 50MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: n i G E C PLESSEY DS3342-1.3 DA1391 MILLIMETRE WAVE BALANCED MIXER The DA1391 is a Millimetre Wave Balanced Mixer. FEATURES • 90 to 98GHz Coverage Available ELECTRICAL CHARACTERISTICS @ 25°C ■ Low Conversion Loss ■ Small Size Param eter Signal Frequency Range


    OCR Scan
    DS3342-1 DA1391 DA1391 98GHz 94GHz 2000MHz 10dBm 150mW UG387/U PDF

    Untitled

    Abstract: No abstract text available
    Text: 37bflSE2 ODlflSll hb4 « P L S B GEC PLESSEY S E M I C O N D U C T O R S DC1860 PLANAR DOPED BARRIER W BAND MICROSTRIP COPLANAR MIXER DIODE Planar doped barrier PDB coplanar mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at tow local oscillator


    OCR Scan
    37bflSE2 DC1860 130mV 10OjiA 94GHz 150jiA DC1S60 37bfl522 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBti g e c plessey DC1860 PLANAR DOPED BARRIER W BAND MICROSTRIP COPLANAR MIXER DIODE Planar doped barrier PDB coplanar mixer diodes represent a major advancement in mixer/detector technology. These diodes otter good conversion loss at low local oscillator


    OCR Scan
    DC1860 100pA 130mV 94GHz PDF

    gunn diode generator

    Abstract: No abstract text available
    Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.


    OCR Scan
    CT3513-1 gunn diode generator PDF

    gunn diodes

    Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
    Text: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539


    OCR Scan
    AH152 18-26GHz) 9-18GHZ) 10-16GHz) 94GHz AH202 AH240 AH365 AH380 gunn diodes AH443 GUNN impatt DH385 DH378 AH802 GaAs p-i-n diodes PDF

    DGB8332

    Abstract: DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521
    Text: 0585443 ALPHA IN D / SEM ICONDUCTOR DE | DSflS443 ODODS Eb 03E 00526 ôj~ft D 3 Gunn Diodes Features • • • • • • ä j Spot Frequency or Wideband Operation Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications


    OCR Scan
    DSflS443 DGB8332 DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521 PDF