HP3326A
Abstract: c 5568 LT5568 quadrature modulator cdma200 MODULATOR ofdm 64-qam
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 966 HIGH LINEARITY DIRECT QUADRATURE MODULATOR LT5568 DESCRIPTION Demonstration circuit 966 is an I/Q modulator featuring the LT 5568. The LT 5568 is a 700MHz to 1.05GHz direct I/Q modulator designed for high performance wireless
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LT5568
700MHz
05GHz
HP3326A
10Kohm
HP3326A
c 5568
LT5568
quadrature modulator
cdma200
MODULATOR ofdm 64-qam
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CTF100
Abstract: EN1-12
Text: RS Components Part # 6655883 - CTF100, 100m reel Design Inner conductor Part NO: RGW-966 Product Code: CTF100 Product Description Application: For communication and signal control systems. Reference Standard Customer's sample spec.and the general standard
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CTF100,
RGW-966
CTF100
008x16x3
5MHz--30
30MHz--470
470MHz--862
EN1122
862MHz--2150
EPA3050B
CTF100
EN1-12
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marking m5S
Abstract: smd code marking C8 SCT-598-8-1 966 MHz
Text: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :
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SCT-598-8-1
VPW05982
Q62702-M0026
SCT-598-8-1
GPW05982
marking m5S
smd code marking C8
966 MHz
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BF966
Abstract: BF961
Text: BF 966 S TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes
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BF961
D-74025
BF966
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Untitled
Abstract: No abstract text available
Text: TCXO 966 OBSOLETE PART: Go to http://www.corningfrequency.com for the latest product information Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range
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966VAA
966VAB
966VAD
966VDlable
D-74924
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marking m5S
Abstract: RF mixer L-Band CMY212 SCT-598-8-1 marking code AN mmic
Text: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :
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SCT-598-8-1
VPW05982
Q62702-M0026
SCT-598-8-1
GPW05982
marking m5S
RF mixer L-Band
CMY212
marking code AN mmic
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Corning Frequency Control
Abstract: No abstract text available
Text: TCXO 966 Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range Compact Size Wide Frequency Range High Stability EFC Standard Surface Mount Available
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966VAA
966VAB
966VAD
966VDB
966VDE
966VDF
966VBB
966VBC
966VBD
966VHAA
Corning Frequency Control
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10M00000
Abstract: Corning Frequency Control
Text: 7&;2 966 Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range Compact Size Wide Frequency Range High Stability EFC Standard Surface Mount Available
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966VAA
966VAB
966VAD
966VDB
966VDE
966VDF
966VBB
966VBC
966VBD
966VHAA
10M00000
Corning Frequency Control
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Untitled
Abstract: No abstract text available
Text: AMPS / PCS On-Glass-Antenna MCA ON-2CP Part No. 927 913-966 14,85 In. Dual Band 800/1900 MHz On-Glass-Antenna * 196.8 In. Technical data Frequency range AMPS: 806 - 890 MHz PCS: 1850 - 1990 MHz Impedance 50 Ω Gain AMPS: 3 dBd PCS: 2 dBd Connection cable
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer SCM-5LH Typical Performance Curves Conversion Loss @ IF=30MHz 12.0 LO = +7dBm Conversion Loss dB 11.3 LO = +10dBm 10.6 LO = +13dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 800 966 1132 1298 1464 1630 1796 1962 2128 2294 2460 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1525MHz
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30MHz
10dBm
13dBm
1525MHz
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer SCM-5LH Typical Performance Curves Conversion Loss @ IF=30MHz 12.0 LO = +7dBm Conversion Loss dB 11.3 LO = +10dBm 10.6 LO = +13dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 800 966 1132 1298 1464 1630 1796 1962 2128 2294 2460 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1525MHz
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30MHz
10dBm
13dBm
1525MHz
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8051 microcontroller dallas with 1620
Abstract: program ds1620 with 8051 8051 microcontroller based Digital clock with alarm LCD interfacing to 8051 ds1620 interfacing with 8051 AN966 LCD based digital thermometer using 8051 microcontroller 8051 application of alarm clock DS1620 lcd interface with 8051
Text: MICROCONTROLLERS TEMPERATURE SENSORS Application Note 966: Feb 21, 2002 App Note 134: Interfacing the DS1620 with a DS5000/8051 Microcontroller This application note introduces the user to software for interfacing a DS5000 8051 compatible microcontroller to the DS1620 digital temperature sensor. The DS1620
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DS1620
DS5000/8051
DS5000
DS1620
DS1620,
com/an966
8051 microcontroller dallas with 1620
program ds1620 with 8051
8051 microcontroller based Digital clock with alarm
LCD interfacing to 8051
ds1620 interfacing with 8051
AN966
LCD based digital thermometer using 8051
microcontroller 8051 application of alarm clock
lcd interface with 8051
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ID100
Abstract: MSAFX10N90A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts 10 Amps 1.1 Ω • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX10N90A
ID100
MSAFX10N90A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features • • • • • • • 900 Volts 10 Amps 1.1 Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX10N90A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX76N07A
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ID100
Abstract: MSAFX24N50A Diode Ds 135. 12A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
ID100
MSAFX24N50A
Diode Ds 135. 12A
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MM018-06L
Abstract: MM118-06 MM118-06F MM118-06L MM118-12 MM118-XX IGBT 3kv tbd 380
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MM118-XX SERIES Features • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF • Compact and rugged construction offering weight and space savings
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MM118-XX
MM118-xxL
MM118-xxF
MM118-06
MM118-12
MM018-06L
MM118-06
MM118-06F
MM118-06L
MM118-12
MM118-XX
IGBT 3kv
tbd 380
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A
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MSAEX8P50A
MSAFX24N50A
MSC0307A
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MSAGZ52F120A
Abstract: MSAHZ52F120A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features • • • • • • • • 1200 Volts 52 Amps 3.2 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof
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MSAGZ52F120A
MSAHZ52F120A
Z52F120B
MSAHZ52F120A
MSAGZ52F120A
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marking m5S
Abstract: No abstract text available
Text: Infineon tssihncio^iat GaAs MMIC CM Y 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Bufferfor CDMA receiver applications • Typical overall performance at cellular frequen cies for P L0 - - 4 dBm operation conditions: 3 V, 11 mA ;/RF = 881 M Hz;/L0 = 966 MHz :
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SCT-598-8-1
CMY212
Q62702-M0026
SCT-598-8-1
marking m5S
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transistor k 3562
Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners
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00052b2
IAL66
ft-11
569-GS
000S154
HAL66
if-11
transistor k 3562
transistor Bf 966
mosfet bf 966
BF966
LM 3558
G28 marking code sot 23
B1412-1
transistor G28
G28 SOT-23
SOT-23 marking BF
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Untitled
Abstract: No abstract text available
Text: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode
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MSAFX11P50A
MSAFX24N50A
MSC0308A
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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OCR Scan
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MSAFX24N50A
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