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    5HN01C

    Abstract: No abstract text available
    Text: 5HN01C N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		5HN01C 100mA 100mA 981116TM2fXHD 5HN01C PDF