Untitled
Abstract: No abstract text available
Text: CPH6304 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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CPH6304
--10V
--15V
991027TM2fXHD
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PDF
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RL66
Abstract: No abstract text available
Text: CPH6351 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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CPH6351
--10V
991027TM2fXHD
RL66
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PDF
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marking KC
Abstract: No abstract text available
Text: CPH6303 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
|
Original
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CPH6303
--10V
991027TM2fXHD
marking KC
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PDF
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