transistor BD 800
Abstract: transistor BD 110
Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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A235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 800
transistor BD 110
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Untitled
Abstract: No abstract text available
Text: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency
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80C517/80C537
80C517
80C537
80C517
80C51
16-bit
235bG5
12QflÃ
8E100X
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U1615
Abstract: No abstract text available
Text: SIEMENS TDA 6612-5 TV-Stereo-Sound Bipolar IC Preliminary Data Features The TDA 6612-5 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled
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Q67000-A5
0235bOS
P-DSO-28-1
023Sb05
U1615
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Untitled
Abstract: No abstract text available
Text: SIEMENS Mini Smart Preliminary data • • • • • • • • • BSP 350 High-side Switch Short-circuit protection Overtemperature protection Overload protection Reverse battery protection Switching inductive load Clamp of negative output voltage with inductive loads
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12-mm
Q67000-S227
S35bOS
00SM441
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MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com
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T-75-37-07
235b05
82532N-TS
PL-CC-68
MARKING CODE SMD JW
TXC CXO
A51AC
isdn modem
2S34
chmn
m1p7
SAB-R3000
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sda0808
Abstract: No abstract text available
Text: tüE 1 • «235tOS 0050247 857 « S I E G SIEMENS SIEMENS AKTIENfiESELLSCHAF Microprocessor-Compatible 8-Bit A/D Converters with 8-Channel Multiplexer Prelim inary Data SDA 0808 SDA 1808 ACM OS 1C Features • • • • • • • • • • • • •
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235tOS
oIES00041
sda0808
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3207-A2
E3Sb05
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T39 diode
Abstract: No abstract text available
Text: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode
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67076-A1004-A2
67076-A1015-A2
A235bQ5
Q020T03
T39 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:
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G10404Ã
C509-L
A8-A15
A535bDS
235bD5
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KJE transistor
Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Text: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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0235bOS
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-E1
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC151,
KJE transistor
KJE 17 transistor
NT 101
transistor AC151
AC151
transistor kje
KJE ZO
transistor ac 151
k 151 transistor
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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BTS 302
Abstract: siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302
Text: SIEMENS BTS 41 OG PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection ’ /
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BTS410G
T0220AB/5
6235bOS
fl23Sfc
0GSH720
C67078-S5305-A6
E3040
BTS 302
siemens LAL 2.25
BTS410G
BTS302
ZENER A24
e3040
410H
DIODE smd Wj
20/BTS 302
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siemens Package Outlines P-LCC
Abstract: No abstract text available
Text: SIEMENS PEB 2055 PEF 2055 Electrical Characteristics 6 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol min. max. ta 70 85 ^stg -6 5 125 6C Vs vr max -0 .4 Vdd + 0-4 V 6 V T’a Storage temperature Maximum voltage on any pin Unit -4 0 Ambient temperature under bias: PEB
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0235fc
P-LCC-44-1
23Sfc
IA-BID122X
siemens Package Outlines P-LCC
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Untitled
Abstract: No abstract text available
Text: SIEM ENS äE35b05 □ □TbL.fig L>E1 5-V Low-Drop Fixed Voltage Regulator TLE 4278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output
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E35b05
P-DSO-14-4
Q67006-A9291
AED01550
TLE4278G
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Untitled
Abstract: No abstract text available
Text: SIEMENS Dynamic Differential Hall Effect Sensor 1C TLE 4923 Preliminary Bipolar 1C Features • • • • • • • • • • • • • Advanced performance Higher sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption
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fi235b05
fl235bD5
TLE4923
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siemens igbt BSM 200 GA 120
Abstract: siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 SIS00025 C67070-A2017-A70 siemens igbt chip
Text: SIEMENS BSM 300 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code BSM 300 G A 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A
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C67076-A2007-A70
C67070-A2017-A70
023SbGS
fl235b05
SIS00025
235bOS
0Qfi02b3
SIS00041
siemens igbt BSM 200 GA 120
siemens igbt BSM 300
igbt module bsm 300
igbt BSM 300 GA 120
siemens igbt BSM 10
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
siemens igbt chip
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siemens sda 30c164
Abstract: pwm fa 552 0071547 SBUR MB SDA30C164 TRANSISTOR BC 187 30C164 soh dl6 P07C SAB-C501
Text: SIEM EN S ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C164 * Preliminary Data Sheet 11.94 fl23Sb05 T4Ö \ SDA30C164 Revision History: Original Version: 11.94 Previous Releases: Page Subjects changes since last revision Data Classification
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30C164
SDA30C164
IO-16
UED04734
02Vn-0.
UED04735
fl23St
0/A17
siemens sda 30c164
pwm fa 552
0071547
SBUR MB
TRANSISTOR BC 187
30C164
soh dl6
P07C
SAB-C501
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Untitled
Abstract: No abstract text available
Text: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.
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fi235bG5
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Untitled
Abstract: No abstract text available
Text: •I Ô235L.05 OQÔIBbS 345 ■ SIEMENS S m art Q uad C hann el Low -S ide Sw itch T L E 5216 G Prelim inary Data Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • nC compatible input
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P-DSO-20-10
00fll3bb
TLE5216G
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Q67000-S271
Abstract: transistor bb BSP452 E6327
Text: SIEM EN S BSP 452 MiniSmart Preliminary Data • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Overvoltage shutdown Switching inductive load
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Q67000-S271
E6327:
OT-223
S3P00121
235b05
D77b7b
transistor bb
BSP452
E6327
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Film Capacitors MKP Coated (Powder Dipped) B 32 612 . B 32 614 Wound MKP capacitors Construction • Dielectric: polypropylene • Wound capacitor technology • Epoxy resin coating (UL 94 V-0) Features • High pulse strength
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-ORAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72V8045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •
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64-Bit
72-Bit
HYM64V8005GU-50/-60/-70
HYM64V8045GU-50/-60/-70
HYM72V8005GU-50/-60/-70
HYM72V8045GU-50/-60/-70
168pin
V8005/45GU-50/-60/-70
0235bD5
fl23SbOS
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Device Specifications C515 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias TA . 0 ‘C to + 110 'C Storage temperature (TSJ). - 65 "C to + 150 “C
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fi23SbOS
A53Sb05
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kpy 12
Abstract: KPY 16
Text: Silicon Piezoresistive Relative Pressure Sensor KPY 41-R KPY 46-R Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability
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Q62705-K159
Q62705-K160
Q62705-K161
Q62705-K163
Q62705-K165
Q62705-K167
a235bQ5
D134E31
kpy 12
KPY 16
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