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AFT05MS031GNR1 Price and Stock

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NXP Semiconductors AFT05MS031GNR1 RF MOSFET LDMOS 13.6V TO270-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AFT05MS031GNR1	Cut Tape	1,047		1	1 $15.04 10 $11.893 100 $10.2429 1000 $9.83096 10000 $9.83096	Buy Now
	AFT05MS031GNR1	Digi-Reel	1,047		1	1 $15.04 10 $11.893 100 $10.2429 1000 $9.83096 10000 $9.83096	Buy Now
	AFT05MS031GNR1	Reel	1,000		500	1 - 10 - 100 - 1000 $9.37835 10000 $9.37835	Buy Now
Avnet Americas	AFT05MS031GNR1	Reel		10 Weeks	500	1 - 10 - 100 - 1000 $8.9817 10000 $8.35989	Buy Now
Mouser Electronics	AFT05MS031GNR1		1,209			1 $15.04 10 $11.9 100 $9.97 1000 $9.41 10000 $9.41	Buy Now
Newark	AFT05MS031GNR1	Reel			500	1 - 10 - 100 - 1000 $9.4 10000 $9.4	Buy Now
Future Electronics	AFT05MS031GNR1	Reel		10 Weeks	500	1 - 10 - 100 - 1000 $9.01 10000 $9.01	Buy Now

Richardson RFPD	AFT05MS031GNR1				500	1 - 10 - 100 - 1000 $9.84 10000 $9.84	Buy Now
Avnet Silica	AFT05MS031GNR1			12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	AFT05MS031GNR1	Cut Tape	210			1 $13.8 10 $10.9 100 $9.01 1000 $8.8 10000 $8.8	Buy Now
EBV Elektronik	AFT05MS031GNR1			12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

AFT05MS031GNR1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AFT05MS031GNR1		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF 13.6V 520MHZ TO270-2G		Original	PDF

AFT05MS031GNR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	PDF	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1
atc 17-25 Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of	Original	PDF	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
ATC600F470BT250XT Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	PDF	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
ATC600F241JT Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	PDF	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12