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Flip Electronics AFT18S230SR3 RF MOSFET LDMOS 28V NI780
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NXP Semiconductors AFT18S230SR3 RF MOSFET LDMOS 28V NI780
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Rochester Electronics	AFT18S230SR3		250		1	1 $132.28 10 $132.28 100 $124.34 1000 $112.44 10000 $112.44	Buy Now
Flip Electronics	AFT18S230SR3		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

AFT18S230SR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AFT18S230SR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, TRANS RF 1.8GHZ 230W NI780S-6		Original	PDF

AFT18S230SR3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
C5750X7S2A106M Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 C5750X7S2A106M	PDF
AFT18S230S Abstract: MXC 037 ATC100B1R2BT AFT18S230SR3 Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 0, 8/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 MXC 037 ATC100B1R2BT AFT18S230SR3	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
mosfet mttf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 mosfet mttf	PDF