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    MA8170

    Abstract: No abstract text available
    Text: », ^ AP9A128 AP9A129 Sïptos • semiconductor 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 8, 10, 12, 15, 20 ns F ast output enable 1Dq e f° r cache applications Low active pow er -400 m W (Typical) Low standby power


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    AP9A128-15VC

    Abstract: ap9a128 AP9A128-12VC L0812
    Text: A P 9A 128 K p to s A P 9A 129 • SEMICONDUCTOR 32K x 8 High Speed CMOS Static RAM Features This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns Max . • • • • • • • Fast access times: 12, 15, 20 ns


    OCR Scan     		AP9A128/9 768-word AP9A128 AP9A129 28-Pin 300-Mil) 32-Pin 400-Mil) 44-Pin AP9A128-15VC ap9a128 AP9A128-12VC L0812 PDF

    AP9A128

    Abstract: AP9A128-12VC AP9A128-20VC AP9A128-15VC AP9A128-20TC DS00007
    Text: Revision: October 9, 1997 Kptos A P 9 A 1 2 8 _ A P 9 A 1 2 9 • s e m ic o n d u c t o r 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable t^oE f°r cache applications


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