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    APT10 Price and Stock

    Microchip Technology Inc APT10SCD120K

    DIODE SIL CARB 1.2KV 10A TO220
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    DigiKey APT10SCD120K Tube 297 1
    • 1 $11.06
    • 10 $7.653
    • 100 $5.7304
    • 1000 $5.7304
    • 10000 $5.7304
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    Microchip Technology Inc APT100GT120JU2

    IGBT MOD 1200V 140A 480W SOT227
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    DigiKey APT100GT120JU2 Bulk 184 1
    • 1 $40.24
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    • 100 $33.525
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    Microchip Technology Inc APT100GT120JU2 27 Weeks
    • 1 $40.24
    • 10 $40.24
    • 100 $29.51
    • 1000 $26.82
    • 10000 $25.21
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    Avnet Silica APT100GT120JU2 29 Weeks 26
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    EBV Elektronik APT100GT120JU2 28 Weeks 26
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    Microchip Technology Inc APT10021JFLL

    MOSFET N-CH 1000V 37A ISOTOP
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    DigiKey APT10021JFLL Tube 60 1
    • 1 $101.2
    • 10 $101.2
    • 100 $82.1375
    • 1000 $82.1375
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    TME APT10021JFLL 1
    • 1 $147.68
    • 10 $116.34
    • 100 $116.34
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    EBV Elektronik APT10021JFLL 33 Weeks 10
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    Microchip Technology Inc APT100S20LCTG

    DIODE ARR SCHOTT 200V 120A TO264
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    DigiKey APT100S20LCTG Tube 47 1
    • 1 $12.11
    • 10 $12.11
    • 100 $9.8125
    • 1000 $9.8125
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    Mouser Electronics APT100S20LCTG 492
    • 1 $12.11
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    • 100 $10.46
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    Verical APT100S20LCTG 150 5
    • 1 -
    • 10 $15.665
    • 100 $12.441
    • 1000 $12.259
    • 10000 $12.259
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    Microchip Technology Inc APT100D60B2G

    DIODE GEN PURP 600V 100A TO247
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    DigiKey APT100D60B2G Tube 46 1
    • 1 $7.45
    • 10 $7.45
    • 100 $6.43
    • 1000 $6.43
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    Avnet Americas APT100D60B2G Tube 22 Weeks 90
    • 1 $7.45
    • 10 $7.45
    • 100 $6.43
    • 1000 $6.05
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    Newark APT100D60B2G Bulk 90
    • 1 $7.45
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    • 100 $6.43
    • 1000 $6.05
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    NAC APT100D60B2G 51
    • 1 $7.12
    • 10 $7.12
    • 100 $6.45
    • 1000 $5.9
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    Master Electronics APT100D60B2G
    • 1 -
    • 10 $7.22
    • 100 $6.37
    • 1000 $5.89
    • 10000 $5.89
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    Find more APT10 price and stock on Findchips.com

    APT10 Datasheets (342)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001 Advanced Power Technology Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Original PDF
    APT1001R1AVR Advanced Power Technology POWER MOS V 1000V 9A 1.100 Ohm Original PDF
    APT1001R1AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R1BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD Original PDF
    APT1001R1BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT1001R1HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1HVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1HVR Unknown High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced Original PDF
    APT1001R1SN Advanced Power Technology Power MOS IV Scan PDF
    APT1001R3BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R3HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R6BFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT1001R6BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1001R6BFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 8A TO-247 Original PDF
    APT1001R6BLL Advanced Power Technology POWER MOS 7 MOSFET Original PDF
    APT1001R6BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R6SFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    ...

    APT10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT10035LLL

    Abstract: APT100GT120JRDL
    Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT120JRDL E145592 APT10035LLL PDF

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026JFLL OT-227 APT10026JFLL PDF

    APT10086BVFR

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 APT10086BVFR PDF

    APT100DQ60

    Abstract: APT100GT60LRG APT100GT60LR
    Text: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT60B2R APT100GT60LR 50KHz O-247 APT100DQ60 APT100GT60LRG PDF

    APT10086BLC

    Abstract: APT10086SLC
    Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10086BLC APT10086SLC O-247 O-247 APT10086 APT10086BLC APT10086SLC PDF

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10SCE170D Zero Recovery Silicon Carbide Schottky Die PRODUCT APPLICATIONS PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES


    Original     		APT10SCE170D PDF

    APT1004RKN

    Abstract: APT1004R2KN 1004r
    Text: D TO-220 G APT1004RKN APT1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS APT1004R2KN APT1004RKN


    Original     		O-220 APT1004RKN APT1004R2KN O-220AB APT1004RKN APT1004R2KN 1004r PDF

    APT100GF60LR

    Abstract: IGBT 100A
    Text: APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 600V Fast IGBT 100A APT100GF60B2R T-Max B2R The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.


    Original     		APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 20KHz O-264 O-264 APT100GF60LR IGBT 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		APT10035JLL OT-227 PDF

    tc 7680

    Abstract: No abstract text available
    Text: APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT10026L2FLL O-264 O-264 MIL-STD-750 tc 7680 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035B2FLL APT10035LFLL 1000V 28A 0.350W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT10035B2FLL APT10035LFLL O-264 O-264 O-247 PDF

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VR 1000V 33A 0.300W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10030L2VR O-264 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


    OCR Scan     		APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050LVR O-264 PDF

    APT10M13JNR

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT10M13JNR 100V 150A 0.013Û APT10M15JNR 100V 140A 0.015Ü ISOTOP® "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		APT10M13JNR APT10M15JNR E145592 APT10M13JNR APT10M15JNR OT-227 PDF

    APT801R2DN

    Abstract: APT5085DN
    Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN


    OCR Scan     		APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT1004RBNR O S POWER MOS IV« 1000V 4.4A 4.00Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter


    OCR Scan     		APT1004RBNR MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 APT1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT


    OCR Scan     		APT1004RBN APT1004R2BN 1004RBN 1004R2BN APT1004R/1004R2BN O-247AD PDF

    apt4020an

    Abstract: No abstract text available
    Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN


    OCR Scan     		APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN


    OCR Scan     		APT1001R6BN 1001R6BN O-247AD PDF