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    APT1001RBVFR Price and Stock

    Microchip Technology Inc APT1001RBVFRG

    MOSFET N-CH 1000V 11A TO247
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    DigiKey APT1001RBVFRG Tube 40
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    Avnet Americas APT1001RBVFRG Tube 32 Weeks 40
    • 1 $13.3378
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    • 100 $12.8115
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    Mouser Electronics APT1001RBVFRG
    • 1 $15.34
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    Verical APT1001RBVFRG 10 5
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    • 100 $17.901
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    Newark APT1001RBVFRG Bulk 40
    • 1 $15.34
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    Microchip Technology Inc APT1001RBVFRG Tube 32 Weeks
    • 1 $15.34
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    Onlinecomponents.com APT1001RBVFRG 14
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    TME APT1001RBVFRG 1
    • 1 $22.05
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    NAC APT1001RBVFRG Tube 25
    • 1 $14.63
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    Richardson RFPD APT1001RBVFRG 40
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    Avnet Silica APT1001RBVFRG 34 Weeks 40
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    EBV Elektronik APT1001RBVFRG 33 Weeks 40
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    Master Electronics APT1001RBVFRG 14
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    Microsemi Corporation APT1001RBVFRG

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 44 A; No. of Elements: 1; Maximum Drain-Source On Resistance: 1 ohm;
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    Vyrian APT1001RBVFRG 300
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    APT1001RBVFR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001RBVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT1001RBVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT1001RBVFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    APT1001RBVFR

    Abstract: No abstract text available
    Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		PDF APT1001RBVFR O-247 O-247 APT1001RBVFR

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    APT1001RBVFR

    Abstract: APT1001RSVFR
    Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR APT1001RSVFR

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    APT1001

    Abstract: APT1001RBVFR
    Text: APT1001RBVFR A dvanced P o w er Te c h n o lo g y 1000V POWER MOS V 11A 1.000Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT1001RBVFR O-247 APT1001 O-247AD MIL-STD-750 00A/HS,

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: A P T 10 0 1 R B V F R ADVANCED W 7Æ P o w e r T e c h n o lo g y 1000v POWER MOS V i 11 a -i.ooon FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF 1000v O-247 APT1001 MIL-STD-750 O-247AD

    8065S

    Abstract: 6015L 20M45S 40M70JVR T5027S 5027s 12080L 6015lv 8030JV 8030L
    Text: ADVANCED PO W ER Te c h n o lo g y Table of Contents Page No. 2 Features/Benefits Product Selector Guide Product Datasheets US and Canadian Representalive Sales Offices US and Canadian D istributor Sales Offices International Representative and D istributor Sales Offices


    OCR Scan     		PDF APT10M 11LVR 25BVFR PT20M APT1001RBVFR 6015L 0151V 6035S APT6040BVR 8065S 20M45S 40M70JVR T5027S 5027s 12080L 6015lv 8030JV 8030L

    1001RBVFR

    Abstract: 1001RBV 1001rb
    Text: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF 1001RBVFR O-247 APT1001RBVFR O-247AD 1001RBV 1001rb