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    APT20M22LVFR Search Results

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    APT20M22LVFR Price and Stock

    Microchip Technology Inc APT20M22LVFRG

    MOSFET N-CH 200V 100A TO264
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    DigiKey APT20M22LVFRG Tube 25
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    Avnet Americas APT20M22LVFRG Tube 32 Weeks 25
    • 1 $19.1688
    • 10 $19.1688
    • 100 $17.6865
    • 1000 $18.43393
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    Mouser Electronics APT20M22LVFRG 143
    • 1 $22.61
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    Newark APT20M22LVFRG Bulk 25
    • 1 $22.61
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    • 100 $19.54
    • 1000 $18.37
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    Microchip Technology Inc APT20M22LVFRG Tube 32 Weeks
    • 1 $22.61
    • 10 $22.61
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    • 1000 $17.91
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    Onlinecomponents.com APT20M22LVFRG
    • 1 $21.6
    • 10 $19.85
    • 100 $18.14
    • 1000 $17.6
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    TME APT20M22LVFRG 1
    • 1 $32.72
    • 10 $26.02
    • 100 $26.02
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    NAC APT20M22LVFRG Tube 17
    • 1 $20.99
    • 10 $20.99
    • 100 $19.33
    • 1000 $17.91
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    Richardson RFPD APT20M22LVFRG 25
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    • 100 $19.39
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    Avnet Silica APT20M22LVFRG 34 Weeks 25
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    EBV Elektronik APT20M22LVFRG 33 Weeks 25
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    Master Electronics APT20M22LVFRG
    • 1 $21.6
    • 10 $19.85
    • 100 $18.14
    • 1000 $17.6
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    APT20M22LVFR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M22LVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M22LVFR Microsemi Power MOS V FREDFET Original PDF
    APT20M22LVFRG Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; Original PDF

    APT20M22LVFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M22LVFR

    Abstract: APT20M22LVR
    Text: APT20M22LVFR 200V 100A 0.022Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT20M22LVFR O-264 O-264 APT20M22LVR APT20M22LVFR APT20M22LVR

    APT20M22LVFR

    Abstract: TO-264AA
    Text: APT20M22LVFR 200V 100A 0.022Ω POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original
    PDF APT20M22LVFR O-264 O-264 APT20M22LVFR TO-264AA

    PF-8500

    Abstract: No abstract text available
    Text: APT20M22LVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V 100A 0.022Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT20M22LVFR O-264 O-264 APT20M22LVR PF-8500

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced r M po w er Tec h n o lo g y APT20M22LVFR 200V 100a 0.022Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    PDF APT20M22LVFR O-264 APT20M22LVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M22LVFR A dvanced P o w er Te c h n o l o g y 200V POWER MOSV 100A 0.022Í1 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT20M22LVFR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT20M22LVFR A dvanced P o w er Te c h n o l o g y P O W E R M O S 200V V 100A 0. 022Í 2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT20M22LVFR O-264 APT20M22LVFR MIL-STD-750 500nH, 00A/HS, O-264AA

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan
    PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr