Untitled
Abstract: No abstract text available
Text: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60JDF1
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Untitled
Abstract: No abstract text available
Text: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60JDF1
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GP60JDF1 APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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Original
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PDF
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APT30GP60JDF1
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Untitled
Abstract: No abstract text available
Text: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60JDF1
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IC 7420
Abstract: APT30GP60JDF1 Diode 224
Text: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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Original
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APT30GP60JDF1
IC 7420
APT30GP60JDF1
Diode 224
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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