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    APT36GA60B Price and Stock

    Microchip Technology Inc APT36GA60B

    IGBT PT 600V 65A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT36GA60B Tube 1
    • 1 $4.81
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    • 100 $3.9
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    Avnet Americas APT36GA60B Tube 26 Weeks 120
    • 1 $4.7138
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    • 100 $3.8025
    • 1000 $3.91517
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    Newark APT36GA60B Bulk 120
    • 1 -
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    Mouser Electronics APT36GA60B 41
    • 1 $4.81
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    Future Electronics APT36GA60B 120
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    Microchip Technology Inc APT36GA60B Tube 26 Weeks
    • 1 $4.81
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    Onlinecomponents.com APT36GA60B
    • 1 -
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    TME APT36GA60B 1
    • 1 $6.26
    • 10 $4.97
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    NAC APT36GA60B Tube 80
    • 1 $4.59
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    • 100 $4.16
    • 1000 $3.8
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    Richardson RFPD APT36GA60B 1
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    Master Electronics APT36GA60B
    • 1 -
    • 10 $4.66
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    Microchip Technology Inc APT36GA60BD15

    IGBT PT 600V 65A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT36GA60BD15 Tube 1
    • 1 $6.88
    • 10 $6.88
    • 100 $5.575
    • 1000 $5.575
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    Avnet Americas APT36GA60BD15 Tube 26 Weeks 80
    • 1 $6.7424
    • 10 $6.7424
    • 100 $5.43563
    • 1000 $5.59669
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    Newark APT36GA60BD15 Bulk 80
    • 1 $9.85
    • 10 $9.85
    • 100 $8.49
    • 1000 $7.97
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    Mouser Electronics APT36GA60BD15
    • 1 $6.88
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    Microchip Technology Inc APT36GA60BD15 Tube 26 Weeks
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    TME APT36GA60BD15 1
    • 1 $9.94
    • 10 $7.9
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    NAC APT36GA60BD15 Tube 56
    • 1 $6.56
    • 10 $6.56
    • 100 $5.95
    • 1000 $5.44
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    Richardson RFPD APT36GA60BD15 80
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    Avnet Silica APT36GA60BD15 28 Weeks 80
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    EBV Elektronik APT36GA60BD15 27 Weeks 80
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    Master Electronics APT36GA60BD15
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    • 10 $11.02
    • 100 $6.33
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    APT36GA60B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT36GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF
    APT36GA60BD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF
    APT36GA60BD15 Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 65A 290W TO-247 Original PDF

    APT36GA60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT36GA60B

    Abstract: APT36GA60S MIC4452 c 1853
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S APT36GA60B APT36GA60S MIC4452 c 1853

    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328

    439J

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 APT36GA60SD15 439J

    400v 20A ultra fast recovery diode

    Abstract: DIODE ED 15 APT36GA60BD15 APT6017LLL MIC4452
    Text: APT36GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60BD15 400v 20A ultra fast recovery diode DIODE ED 15 APT36GA60BD15 APT6017LLL MIC4452

    APT36GA60B

    Abstract: No abstract text available
    Text: APT36GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B efficie20 APT36GA60B

    Untitled

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15

    Untitled

    Abstract: No abstract text available
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S

    400v 20A ultra fast recovery diode

    Abstract: No abstract text available
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S 400v 20A ultra fast recovery diode

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301