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    APT4014B Search Results

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    APT4014B Price and Stock

    Microchip Technology Inc APT4014BVFRG

    MOSFET N-CH 400V 28A TO247
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    DigiKey APT4014BVFRG Tube 50
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    • 100 $10.8
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    Avnet Americas APT4014BVFRG Tube 32 Weeks 50
    • 1 $10.584
    • 10 $10.584
    • 100 $8.775
    • 1000 $8.80914
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    Mouser Electronics APT4014BVFRG
    • 1 $10.8
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    Newark APT4014BVFRG Bulk 50
    • 1 $10.8
    • 10 $10.8
    • 100 $9.34
    • 1000 $8.77
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    Microchip Technology Inc APT4014BVFRG Tube 32 Weeks
    • 1 $10.8
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    • 1000 $8.55
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    Onlinecomponents.com APT4014BVFRG
    • 1 -
    • 10 $10.48
    • 100 $9
    • 1000 $8.41
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    TME APT4014BVFRG 1
    • 1 $15.58
    • 10 $12.45
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    NAC APT4014BVFRG Tube 35
    • 1 $10.32
    • 10 $10.32
    • 100 $9.36
    • 1000 $8.56
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    Master Electronics APT4014BVFRG
    • 1 -
    • 10 $10.48
    • 100 $9
    • 1000 $8.41
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    Microsemi Corporation APT4014BVR

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    Quest Components APT4014BVR 8
    • 1 $17.226
    • 10 $15.312
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    APT4014B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT4014BVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT4014BVFRG Microsemi Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; Original PDF
    APT4014BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT4014B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT4014BVFR

    Abstract: APT4014SVFR
    Text: APT4014BVFR APT4014SVFR 400V POWER MOS V 0.140Ω 28A BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT4014BVFR APT4014SVFR O-247 O-247 APT4014BVFR APT4014SVFR

    Untitled

    Abstract: No abstract text available
    Text: APT4014BVR 400V 28A 0.140Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT4014BVR O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT4014BVFR APT4014SVFR 400V POWER MOS V 0.140Ω 28A BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT4014BVFR APT4014SVFR O-247 O-247 APT4014BVFR Cont80)

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: APT4014BVR A dvanced P o w er Te c h n o l o g y 400V 28A 0.140£! POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT4014BVR O-247 MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT4014B VR 400v28a 0.i40q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		PDF APT4014B 400v28a O-247 APT4014BVR

    Untitled

    Abstract: No abstract text available
    Text: APT4014BVR A DVAN CED P o w er Te c h n o lo g y ' 400V 28A 0.140Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT4014BVR O-247 APT4014BVR IL-STD-750 O-247AD

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr