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    AR25J Price and Stock

    TE Connectivity 36502AR25JTDG

    FIXED IND 250NH 350MA 1 OHM SMD
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    DigiKey 36502AR25JTDG Digi-Reel 3,251 1
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    36502AR25JTDG Cut Tape 3,251 1
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    36502AR25JTDG Reel 2,000 2,000
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    Mouser Electronics 36502AR25JTDG 3,217
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    Newark 36502AR25JTDG Bulk 2,000
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    Avnet Abacus 36502AR25JTDG 13 Weeks 2,000
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    Master Electronics 36502AR25JTDG
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    TE Connectivity 36502AR25JTDG (ALTERNATE: 5-1624113-4)

    Inductor, High Frequency, Ind 0.25 uH, Tol 5%, Cur-Rtg 0.35 A, SMT, 0805 | TE Connectivity 36502AR25JTDG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 36502AR25JTDG (ALTERNATE: 5-1624113-4) Bulk 2,000
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    AR25J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AR25J Taiwan Semiconductor Rectifier: Standard Original PDF
    AR25J Taiwan Semiconductor 25.0 A High Current Plastic Silicon Rectifier Original PDF
    AR25J Won-Top Electronics 25A AUTOMOTIVE BUTTON DIODE Original PDF

    AR25J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package AR Package Weight mg 1800 Product Group Type No. AR25A – AR25J AR35A – AR35J AR50A – AR50J Component Die Copper Alloy Plating Matte Tin Encapsulation Tolerance Material


    Original     		PDF AR25A AR25J AR35A AR35J AR50A AR50J 2011/65/EU.

    SMD DIODE UF4007

    Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
    Text: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and


    Original     		PDF O-220, O-220A BZT52C2V4S BZT52C51S OD-323 BZX84C2V4W BZX84C51W OT-323 MMBZ5221BW MMBZ5259BW SMD DIODE UF4007 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd

    MARKING 25J

    Abstract: AR25B AR25A AR25D AR25G ARS25A ARS25B ARS25D s25a ARS25M
    Text: AR/S25A – AR/S25M W TE PO WE R SEM IC O ND UC TO R S 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data


    Original     		PDF AR/S25A AR/S25M MIL-STD-202, MARKING 25J AR25B AR25A AR25D AR25G ARS25A ARS25B ARS25D s25a ARS25M

    C3502

    Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
    Text: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR


    Original     		PDF LD5006 DO-21 PF5000 PF5001 PF5002 PF5004 PF5006 PF5008 PF5010 C3502 c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M

    AR25B

    Abstract: No abstract text available
    Text: ARS25A-ARS25M,AR25A-AR25M HIGH CURRENT REVERSE VOLTAGE AUTOMOBILE RECTIFIER - 50 to 1000Volts FORWARD CURRENT - 25 Amperes ARS FEATURES AR ●Utilizing viod-free molded plastic technique ●Low power loss ●High Surge Capability .225 5.7 .215(5.5) ●High temperature soldering guaranteed:


    Original     		PDF ARS25A-ARS25M AR25A-AR25M 1000Volts STD-202E UL-94 300us AR25B

    SSIE1340

    Abstract: varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A VRRM IFSM (V) (A) vF Max IF @ (V) IR Test 25 °C @ (A) (A) VR IR Test M @ (A) T2 Test (X) Toper Package Style Max (°C) General-Purpose, lo >= 25 A (Cont'd) 5 10 15 20 25 30


    Original     		PDF R4100325 SR25B6S DD6626 1N1457 1N1196 VTA400 VTA400/S VTA400/T SSIE1340 varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S

    Untitled

    Abstract: No abstract text available
    Text: AR/S25A – AR/S25J 25A AUTOMOTIVE BUTTON DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data


    Original     		PDF AR/S25A AR/S25J MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data A Case: AR or ARS, Molded Plastic


    Original     		PDF AR/S25A AR/S25J MIL-STD-202,

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    Untitled

    Abstract: No abstract text available
    Text: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage B Low Cost C High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique 


    Original     		PDF AR/S25A AR/S25J MIL-STD-202,

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    MARKING 25J

    Abstract: AR25A AR25B AR25D AR25G ARS25A ARS25B ARS25D green color ring diode
    Text: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data A Case: AR or ARS, Molded Plastic


    Original     		PDF AR/S25A AR/S25J MIL-STD-202, MARKING 25J AR25A AR25B AR25D AR25G ARS25A ARS25B ARS25D green color ring diode

    Solitron J775-2

    Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
    Text: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188


    OCR Scan     		PDF 10D05 RL151G 1N4934 RL152G 1N4935 RL153G RL154G 1N4936 RL155G Solitron J775-2 BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba

    Untitled

    Abstract: No abstract text available
    Text: ARS25A-ARS25M, AR25A-AR25M HIGH CURRENT AUTOMOBILE RECTIFIER REVERSE VOLTAGE FORWARD CURRENT - 50 to 1000 Volts - 25 Amperes AR ARS FEATURES • Utilizing viod-free molded plastic technique • Low power loss • High surge capability • High temperature soldering guaranteed:


    OCR Scan     		PDF ARS25A-ARS25M, AR25A-AR25M

    Untitled

    Abstract: No abstract text available
    Text: ARS25 / AR25 SERIES TSC S 25.0 AMPS. High Current Plastic Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 25.0 Amperes s ^ <• <5* Plastic material used carries Underwriters Laboratory Classification 94V-0 Low cost construction utilizing void-free molded


    OCR Scan     		PDF ARS25 MILSTD-202, AR25A AR25B AR25D AR25G AR25J AR25K AR25M

    RS8KT

    Abstract: RS8DT RS8JT rs8gt G1506 P600M byx55 GL852 THRU1N5408 AR25B
    Text: QUICK GUIDE TO PLASTIC RECTIFIERS D041 D041 D041 D041 D0201 AD 0041 00201 AD D0201AD D0201AD D0201 AD D0201 AD D0201AD D0201AD BY396Pthru BY399P* D0201 AD lo A 10 10 10 10 1.2 1.5 2.0 30 3.0 3.0 3.0 3.0 3.0 3.0 (g)T* l°C| 75 100 75 55 55 75 at Tl 55 105


    OCR Scan     		PDF 1N4001 1N4007 M100A M100M M100B M100D 1N4933* 1N4937* 1N4933 RS8KT RS8DT RS8JT rs8gt G1506 P600M byx55 GL852 THRU1N5408 AR25B

    Untitled

    Abstract: No abstract text available
    Text: 2SE D 6ENL INSTR/ POWER • 3 ô ciai37 0003342 2 ■ ■ r - a - i f ARS25 / AR25 SERIES HICH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 25.0 Amperes FEATURES ARS ♦ The plastic package carries Underwriters Laboratory Fiammabiiity Classification 94V-0


    OCR Scan     		PDF iai37 ARS25 MIL-STD-202,

    BY27-150

    Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
    Text: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing


    OCR Scan     		PDF sP10-1006 ZGPKM10 2GP1M10A ZGP10-110B ZGP10-12Û ZGP10-12QA ZGP10-1206 ZGP10-130 ZGP10-13QA ZGP10-130B BY27-150 GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700