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    onsemi BAW56WT1G

    DIODE ARRAY GP 70V 200MA SC70-3
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    DigiKey BAW56WT1G Digi-Reel 30,194 1
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    onsemi SBAW56WT1G

    DIODE ARRAY GP 70V 200MA SC70-3
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    DigiKey SBAW56WT1G Cut Tape 23,025 1
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    Rochester Electronics SBAW56WT1G 406,000 1
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    Micro Commercial Components BAW56WT-TP

    DIODE ARRAY GP 75V 150MA SOT323
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    DigiKey BAW56WT-TP Cut Tape 1,170 1
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    onsemi BAW56WT1

    DIODE ARRAY GP 70V 200MA SC70-3
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    Rochester Electronics LLC BAW56WT1

    DIODE ARRAY GP 70V 200MA SC70-3
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    DigiKey BAW56WT1 Bulk 11,539
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    BAW56WT Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAW56WT Micro Commercial Components 200mW Switching Diode Original PDF
    BAW56WT1 Leshan Radio Company Dual Switching Diodes Original PDF
    BAW56WT1 Motorola Silicon Diode Original PDF
    BAW56WT1 On Semiconductor Dual Switching Diode Original PDF
    BAW56WT1 On Semiconductor Switching Diode (dual, common anode) SC70 70V ; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    BAW56W-T1 Philips Semiconductors High-speed double diode Original PDF
    BAW56W-T1 Won-Top Electronics SURFACE MOUNT FAST SWITCHING DIODE Original PDF
    BAW56WT1-D On Semiconductor Dual Switching Diode Original PDF
    BAW56WT1G On Semiconductor Dual Switching Diode, Common Anode Original PDF
    BAW56WT3 On Semiconductor BAW56 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, SC-70, 3 PIN, Signal Diode Original PDF
    BAW56W-T3 Won-Top Electronics SURFACE MOUNT FAST SWITCHING DIODE Original PDF
    BAW56WT/R NXP Semiconductors High-speed switching diodes - Cd max.: 2 pF; Configuration: dual c.a. ; IF max: 150 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 90 V Original PDF
    BAW56WT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BAW56WT-TP Micro Commercial Components Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 75V 150MA SOT323 Original PDF

    BAW56WT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25ć Lead Free Finish/Rohs Compliant ("P"Suffix designates


    Original
    PDF BAW56WT 200mW 200mW OT-323 150mA

    75V 150mA Diode

    Abstract: diodes ir K 250 diode transistor sot datasheet
    Text: MCC BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking: KJC SOT-323 A D Maximum Ratings


    Original
    PDF BAW56WT 200mW 150mA 200mW OT-323 150mA; 75Volts 75V 150mA Diode diodes ir K 250 diode transistor sot datasheet

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes BAW56WT1 3 1 2 DEVICE MARKING CASE 419–04, STYLE 4 BAW56WT1 = A1 SOT–323 SC–70 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Reverse Voltag Forward Current Peak Forward Surge Current VR IF 70 200 500


    Original
    PDF BAW56WT1 BAW56WT1

    Untitled

    Abstract: No abstract text available
    Text: BAW56WT1G, BAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF BAW56WT1G, SBAW56WT1G BAW56WT1/D

    BAW56WT1G

    Abstract: No abstract text available
    Text: BAW56WT1G Dual Switching Diode, Common Anode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current


    Original
    PDF BAW56WT1G BAW56WT1/D BAW56WT1G

    SBAW56WT1G

    Abstract: No abstract text available
    Text: BAW56WT1G, BAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF BAW56WT1G, SBAW56WT1G AEC-Q101 SC-70 BAW56WT1/D

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Power dissipation: 200mW Tamb=25ć Halogen free available upon request by adding suffix "-HF"


    Original
    PDF BAW56WT 200mW 200mW OT-323

    diode Marking code A2

    Abstract: onsemi 035 diode BAW56WT1 BAW56WT1G
    Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current


    Original
    PDF BAW56WT1 BAW56WT1/D diode Marking code A2 onsemi 035 diode BAW56WT1 BAW56WT1G

    Untitled

    Abstract: No abstract text available
    Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current


    Original
    PDF BAW56WT1 SC-70

    BAW56WT1

    Abstract: SMD310
    Text: ON Semiconductort Dual Switching Diode BAW56WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.6 mW/°C RqJA 0.625


    Original
    PDF BAW56WT1 r14525 BAW56WT1/D BAW56WT1 SMD310

    BC237

    Abstract: MPS9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


    Original
    PDF BAW56WT1 70/SOT MA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS9

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Power dissipation: 200mW Tamb=25℃ • Case Material: Molded Plastic. Classification Rating 94V-0


    Original
    PDF BAW56WT 200mW 200mW OT-323 150mA 150mA; 75Volts

    BAW56WT1

    Abstract: BAW56WT1G
    Text: BAW56WT1 Preferred Device Dual Switching Diode, Common Anode Features • Pb−Free Package is Available http://onsemi.com CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge)


    Original
    PDF BAW56WT1 SC-70 BAW56WT1/D BAW56WT1 BAW56WT1G

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Power dissipation: 200mW Tamb=25ć x Case Material: Molded Plastic. UL Flammability


    Original
    PDF BAW56WT 200mW 200mW OT-323 150mA

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Power dissipation: 200mW Tamb=25ć Halogen free available upon request by adding suffix "-HF"


    Original
    PDF BAW56WT 200mW 200mW OT-323

    BAW56WT

    Abstract: Diode Marking .004
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode


    Original
    PDF BAW56WT 200mW 150mA 200mW OT-323 150mA; 75Volts BAW56WT Diode Marking .004

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Switching Diode BAW56WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.6 mW/°C RqJA 0.625


    Original
    PDF BAW56WT1 70/SOT

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BAW56WT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Power dissipation: 200mW Tamb=25ć x Case Material: Molded Plastic. UL Flammability


    Original
    PDF BAW56WT 200mW 200mW OT-323 150mA

    BAW56WT1

    Abstract: SMD310
    Text: MOTOROLA Order this document by BAW56WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original
    PDF BAW56WT1/D BAW56WT1 70/SOT BAW56WT1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current


    Original
    PDF BAW56WT1 SC-70 BAW56WT1/D

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original
    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAW56WT1 Dual Sw itching Diode Motorola Preferred Device MAXIMUM RATINGS TA = 25 C Rating R e ve rse V o lta g e F o rw a rd C u rre n t P ea k F o rw a rd S u rg e C u rre n t Symbol Max Vr 70 Vdc if 2 00 m Adc 'F M (s u rg e )


    OCR Scan
    PDF BAW56WT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW56WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Sw itching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current if 200 mAdc iFM(surge)


    OCR Scan
    PDF BAW56WT1/D BAW56WT1 70/SOTâ SC-70/SQT-323