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    Panasonic Electronic Components ERJ-3RBD3301V

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    onsemi MMBD330T1G

    DIODE SCHOTTKY 30V 120MW SC70-3
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    onsemi MBD330DWT1G

    RF DIODE SCHOTTKY 30V 120MW SC88
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    MBD330DWT1G 610 9
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    Rochester Electronics MBD330DWT1G 25,800 1
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    Panasonic Electronic Components ERJ-3RBD3302V

    RES 33K OHM 0.5% 1/10W 0603
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    DigiKey ERJ-3RBD3302V Cut Tape 3,115 1
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    onsemi 7WBD3306USG

    IC BUS SWITCH 1 X 1:1 US8
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    DigiKey 7WBD3306USG Cut Tape 3,096 1
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    BD330 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD330 Philips Semiconductors PNP Power Transistor Original PDF
    BD330 Philips Semiconductors PNP GENERAL PURPOSE POWER TRANSISTORS Original PDF
    BD330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD330 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD330 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD330 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD330 Unknown Cross Reference Datasheet Scan PDF
    BD330 Unknown Transistor Replacements Scan PDF
    BD330 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD330 Siemens PNP SILICON PLANAR TRANSISTOR Scan PDF
    BD330 Siemens PNP SILICON PLANAR TRANSISTOR Scan PDF
    BD330/BD329 Infineon Technologies PNP Silicon Planar Scan PDF

    BD330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD330

    Abstract: Q 817 BD329 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor


    Original
    PDF M3D100 BD330 O-126; BD329. SCA54 117047/00/02/pp8 BD330 Q 817 BD329 BP317

    BD330

    Abstract: Sp pnp transistor BD330 transistor 1211 BD329 BP317 philips all transistor car radio
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 26 Philips Semiconductors Product specification PNP power transistor BD330 PINNING FEATURES • High current max. 3 A


    Original
    PDF M3D100 BD330 O-126; BD329. MAM272 SCA63 115002/00/03/pp8 BD330 Sp pnp transistor BD330 transistor 1211 BD329 BP317 philips all transistor car radio

    c2611

    Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
    Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO


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    PDF O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2n2222a SOT23

    Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


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    PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC107 BC108 BC109 2n2222a SOT23 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    BD3308

    Abstract: No abstract text available
    Text: , UNPLBL ISHED WA5 06-56740, RL5E PER f ADDED -2 PER f REV PER ECN BD3308 5UP5D -2 PER EC 0020-492-96 REV PER EC 0G4CM5S-96 CONNECTOR M A T E5 WI T H ANY 7 6 HD-22 AMPLIM1TE S E R I E S , F L A M E R ET A RD AN T 9 4 PO LYE ST ER , COLOR; V - 0 R AT E D


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    PDF BD3308 0G4CM5S-96 HD-22 45555SS2S2S5JBS555S5555SS55SS5 HD-22

    Diode LT 330D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA M BD110DW T1 M BD330DW T1 M BD770DW T1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new S O T -363 package is a solution which simplifies


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    PDF MBD110DWT1/D BD110DW BD330DW BD770DW 419B-01 Diode LT 330D

    b0330

    Abstract: BD330 Transistors BD330 BD329 A03435 BD329/BD330 transistor BD330
    Text: BD330 J V_ S IL IC O N PLANAR EPITAXIAL PO W ER T RA N SISTO R P -N -P tr a n s is to r in a S O T -32 p la stic envelope intended fo r c a r -r a d io output sta g e s. N 'P -N com plem ent is BD329. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A


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    PDF BD330 OT-32 BD329. O-126 OT-32) b0330 BD330 Transistors BD330 BD329 A03435 BD329/BD330 transistor BD330

    b0330

    Abstract: No abstract text available
    Text: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0


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    PDF BD330 OT-32 BD329. Lti53T31 7Z62126 bbS3131 D0343S3 B0330 b0330

    transistor ph 45 v

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A


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    PDF BD330 BD330 BD329. 115002/00/03/pp8 transistor ph 45 v

    Untitled

    Abstract: No abstract text available
    Text: BD329 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied. Q UICK REFERENCE D A TA C o lle c to r-e m itte r voltage VgE - 0


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    PDF BD329 OT-32 BD330. bbS3T31 0D34344 003H3HS DD34347

    bd330

    Abstract: No abstract text available
    Text: BD329 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N - I’ -N tr a n s is to r in a SO T-32 p la s tic package, intended fo r c a r -radio output stages. P-N -P co m p lem en t is BD330. M atch ed p a irs can be supplied. Q UICK REFERENCE D A T A


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    PDF BD329 BD330. BD329/BD330 bd330

    BD329/BD330

    Abstract: BD329 BD330
    Text: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.


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    PDF BD329 OT-32 BD330. O-126 OT-32) T-33-07 711005b BD329/BD330 BD329 BD330

    BD329

    Abstract: bd330
    Text: Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 20 V). emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • Power switching and amplification, especially in portable


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    PDF BD330 O-126; BD329. BD329 bd330

    bd330

    Abstract: bd329
    Text: BD329 PHILIPS INTERNATIONAL SbE D 7110A2b 004E67D ^76 M P H I N • T " 3 3 ' 0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P-N tra n s is to r in a S O T -3 2 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied.


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    PDF BD329 7110A2b 004E67D BD330. 711055b T-33-07 BD329 bd330

    transistor k58

    Abstract: No abstract text available
    Text: BD330 J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P- N - P t r a n s is to r in a SO T-32 p la s tic package intended fo r c a r- rn d io output stages. N - P-N co m p lem en t is BD329. M atch ed p a ir s can be supplied. Q U IC K R E F E R E N C E D A T A


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    PDF BD330 BD329. /BD330 transistor k58