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    Text: PowerMOS transistor_ N AUER PHILIPS/DISCRETE QbE D • BIJZ35_ [^53=131 O O l M b n 5 ■ T - 3 V l J July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a metal envelope. This device is intended for use in


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    BIJZ35_ BUZ35 bbS3T31 T-39-11 BUZ35_ 0014b23 bLS3T31 PDF