BLF6G22-180PN; Search Results
BLF6G22-180PN; Price and Stock
Ampleon BLF6G22-180PN,135RF MOSFET LDMOS 32V SOT539A |
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BLF6G22-180PN,135 | Reel |
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Ampleon BLF6G22-180PN,112RF MOSFET LDMOS 32V SOT539A |
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BLF6G22-180PN,112 | Tray |
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Ampleon BLF6G22-180PNPower LDMOS Transistor N-Channel 65V 5-Pin SOT-539A T/R - Tape and Reel (Alt: BLF6G22-180PN,135) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G22-180PN | Reel | 100 |
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Ampleon BLF6G22-180PN112Trans MOSFET N-CH 65V 5-Pin LDMOST Blister - Rail/Tube (Alt: BLF6G22-180PN,112) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G22-180PN112 | Tube | 60 |
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BLF6G22-180PN; Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BLF6G22-180PN |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB | Original | |||
BLF6G22-180PN,112 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A | Original | |||
BLF6G22-180PN,112 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack | Original | |||
BLF6G22-180PN,112 |
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RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A | Original | |||
BLF6G22-180PN,135 |
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BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large | Original |