Untitled
Abstract: No abstract text available
Text: BR200A Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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BR200A
Freq200M
StyleTO-210AC
Code3-12
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co KG Open Loop Hall Current Sensor CYHCS-K3/BR This Hall Effect current sensor is based on open loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer
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D-85464
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br200a
Abstract: No abstract text available
Text: 13368602 S O L IT R O N nFVTHFR 66C TMn 01932 D T~ ,/ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS t.b DE I ñ3kñt.0a DQDIIBS 1 | - BR200A BR200B* BR201A BR201B* NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 20 AMPERES FEATURES HIGH POWER RADIATION EXPOSURE LEVEL TO 3 x 1 0 l 4 n/Cm2
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BR201B*
BR200A
BR200B*
BR201A
T0-61/I
BR200A
BR201A
BR200A,
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2N5417
Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N5417
A 14U
UD3008
2N5292
BD263
BD264A
CI44
transistor t05
BC412
KIS434
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
PNP transistor A705
2N1620
2sc768
2N1619
UD3008
BD264
MHT6414
SOT1156
MHT6311
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BC507
Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BC507
l18b
5.1 channel producing ic
BC180
bc507 transistor
TIS107
ME60
PET1075
PET1075A
PET6003
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2n1620
Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E
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BF125
Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BF125
PET8002
l18b
GW 9n
BFW74
BFW75
BFW76
BFX53
T046
ML101A
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2SD45
Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
SDT1156
SDT1157
400mS
SDT1158
SDT1159
400ml
SDT1160
SDT1161
2SD45
SOT1156
2sc768
2N1210-1
2N1619
2N1620
SDT1152
MHT6311
MHT6312
MHT6313
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2N1620
Abstract: 2N1619 2SC5220 SDT1152 SOT1156
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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tea 1601 t
Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ML101A
Abstract: BD265A SP8412
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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2SC631
Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2SC631
2SC632
FV918
2N1082
transistor 2sC632
BCY50
2N7481
a608
2SC402A
ML102B
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