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Infineon Technologies AG BSM150GB170DN2HOSA1 IGBT MOD 1700V 220A 1250W
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DigiKey	BSM150GB170DN2HOSA1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BSM150GB170DN2E3256HDLA1 BSM150GB170DN2 - INSULATED GATE
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DigiKey	BSM150GB170DN2E3256HDLA1	Bulk			3	1 - 10 $112.02 100 $112.02 1000 $112.02 10000 $112.02	Buy Now
Altech Corporation BSM150GB170DN2 POWER MODULE \| Altech Corp BSM150GB170DN2
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RS	BSM150GB170DN2	Bulk			1	1 $354.42 10 $326.07 100 $326.07 1000 $326.07 10000 $326.07	Get Quote
Infineon Technologies AG BSM150GB170DN2E3256HDLA1 BSM150GB170 - Insulated Gate Bipolar Transistor Module '
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Rochester Electronics	BSM150GB170DN2E3256HDLA1		14		1	1 $107.71 10 $107.71 100 $101.25 1000 $91.55 10000 $91.55	Buy Now

BSM150GB170DN2 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BSM150GB170DN2		Eupec	TRANS IGBT MODULE N-CH 1700V 220A 7IS5A		Original	PDF
BSM150GB170DN2		Eupec	IGBT Power Module		Original	PDF
BSM150GB170DN2		Eupec	IGBT Power Module		Original	PDF
BSM150GB170DN2		Siemens	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)		Original	PDF
BSM150GB170DN2E3166		Eupec	TRANS IGBT MODULE N-CH 1700V 220A 7HALF-BRIDGE 2		Original	PDF
BSM150GB170DN2E3166		Siemens	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)		Original	PDF
BSM150GB170DN2HOSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - MODULE IGBT 1700V		Original	PDF

BSM150GB170DN2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BSM150GB170DN2 Abstract: C67070-A2709-A67 Text: BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC BSM150GB170DN2 E3166 1700V 220A Package Ordering Code	Original	PDF	BSM150GB170DN2 E3166 C67070-A2709-A67 125070DN2 Aug-01-1996 C67070-A2709-A67
BSM150GB170DN2 Abstract: C67070-A2709-A67 Text: BSM150GB170DN2 E3166 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC BSM150GB170DN2 E3166 1700V 220A Package Ordering Code HALF-BRIDGE 2	Original	PDF	BSM150GB170DN2 E3166 E3166 C67070-A2709-A67 Oct-27-1997 C67070-A2709-A67
IGBT cross reference semikron eupec Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40 Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130	Original	PDF	DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
FS20R06XE3 Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors	Original	PDF	D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
IGBT cross reference semikron eupec Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40 Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130	Original	PDF	DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
bsm25gp120 b2 Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3 Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3	Original	PDF	FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
FS450R12KE3 S1 Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.	Original	PDF	E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
BSM25GP120 b2 Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224 Text: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1	Original	PDF	kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Untitled Abstract: No abstract text available Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = 10 Ohm Type ‘'CE BSM150GB170DN2 E3166 1700V 220A h	OCR Scan	PDF	BSM150GB170DN2 E3166 E3166 C67070-A2709-A67
VQE 13E Abstract: No abstract text available Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package	OCR Scan	PDF	BSM150GB170DN2 E3166 C67070-A2709-A67 0235b05 VQE 13E
Untitled Abstract: No abstract text available Text: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code	OCR Scan	PDF	BSM150GB170DN2 E3166 C67070-A2709-A67 E3166 Oct-27-1997