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onsemi BUZ11-NR4941 MOSFET N-CH 50V 30A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUZ11-NR4941	Tube	3,378		1	1 $1.34 10 $1.34 100 $1.34 1000 $0.47157 10000 $0.42962	Buy Now
Mouser Electronics	BUZ11-NR4941		5,673			1 $1.34 10 $0.701 100 $0.632 1000 $0.491 10000 $0.491	Buy Now
Newark	BUZ11-NR4941	Bulk	15,278		1	1 $0.393 10 $0.393 100 $0.393 1000 $0.393 10000 $0.393	Buy Now
	BUZ11-NR4941	Bulk	800		1	1 $0.405 10 $0.405 100 $0.405 1000 $0.405 10000 $0.405	Buy Now
Onlinecomponents.com	BUZ11-NR4941					1 - 10 - 100 $0.513 1000 $0.4645 10000 $0.418	Buy Now
TME	BUZ11-NR4941		246		1	1 $1.23 10 $0.97 100 $0.593 1000 $0.558 10000 $0.558	Buy Now

Richardson RFPD	BUZ11-NR4941				1,600	1 - 10 - 100 - 1000 - 10000 $0.43	Buy Now
Avnet Silica	BUZ11-NR4941		250	18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	BUZ11-NR4941	Tube	2			1 $1.23 10 $1.23 100 $1.23 1000 $1.23 10000 $1.23	Buy Now
EBV Elektronik	BUZ11-NR4941			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	BUZ11-NR4941		3,750		796	1 - 10 - 100 - 1000 $0.485675 10000 $0.485675	Buy Now
Rochester Electronics LLC BUZ111S N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUZ111S	Bulk			353	1 - 10 - 100 - 1000 $0.85 10000 $0.85	Buy Now
Rochester Electronics LLC BUZ11S2537 N CHANNEL ENHANCEMENT-MODE TRANS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUZ11S2537	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi BUZ11_R4941 MOSFET N-CH 50V 30A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUZ11_R4941	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BUZ111SLE3045A MOSFET N-CH 50V 80A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUZ111SLE3045A	Bulk			355	1 - 10 - 100 - 1000 $0.85 10000 $0.85	Buy Now

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BUZ11 Datasheets (104)

Part	Manufacturer	Description	Datasheet Type	PDF
BUZ11	Fairchild Semiconductor	TRANS MOSFET N-CH 50V 30A 3TO-220AB	Original	PDF
BUZ11	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
BUZ11	Intersil	30A, 50V, 0.040 ?, N-Channel Power MOSFET	Original	PDF
BUZ11	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUZ11	Siemens	SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)	Original	PDF
BUZ11	STMicroelectronics	N-Channel 50V - 0.03Ohm - 33A TO-220 STripFET MOSFET	Original	PDF
BUZ11	STMicroelectronics	N-Channel 50 V-0.03 ohm-33 A TO-220 STripFET MOSFET	Original	PDF
BUZ11	STMicroelectronics	N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
BUZ11	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BUZ11	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
BUZ11	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
BUZ11	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 50V, 30A, Pkg Style TO-220AB	Scan	PDF
BUZ11	Motorola	Switchmode Datasheet	Scan	PDF
BUZ11	Motorola	European Master Selection Guide 1986	Scan	PDF

BUZ11	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BUZ11	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ11	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUZ11	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BUZ11	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUZ11	Unknown	FET Data Book	Scan	PDF

BUZ11 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ11A Abstract: No abstract text available Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	PDF	BUZ11A 100oC 175oC O-220 BUZ11A
BUZ111SL Abstract: Q67040-S4003-A2 SPP80N05 Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code	Original	PDF	BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05
BUZ11 Abstract: TB334 Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching	Original	PDF	BUZ11 TA9771. BUZ11 TB334
SPP80N05L Abstract: BUZ111SL Q67040-S4003-A2 Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code	Original	PDF	BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05L BUZ111SL Q67040-S4003-A2
TA9771 Abstract: BUZ11 TB334 Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as	Original	PDF	BUZ11 BUZ11 TA9771. TA9771 TB334
buz11 equivalent Abstract: BUZ11FI BUZ11 BUZ11 in electronic pulse schematic Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	PDF	BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 buz11 equivalent BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
BUZ11 Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1 Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE	Original	PDF	BUZ11 -TO-220 175oC O-220 BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
irf540n irf640 Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S	Original	PDF	BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
BUZ11A Abstract: BUZ11 Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	PDF	BUZ11A -220A 10peration BUZ11A BUZ11
P50N05 Abstract: p50n06 TP3055EL tp50n05e MTP36N06E Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2	OCR Scan	PDF	BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E
BUZ11 Abstract: No abstract text available Text: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics	OCR Scan	PDF	O-220AB BUZ11
Untitled Abstract: No abstract text available Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED	OCR Scan	PDF	BUZ11 BUZ11FI BUZ11/FI ISQWATT220
Untitled Abstract: No abstract text available Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE	OCR Scan	PDF	BUZ11 -TO-220
BUZ11 motorola Abstract: BUZ11 buz11a Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as	OCR Scan	PDF	BUZ11 BUZ11A BUZ11 motorola buz11a

TSD45N50V Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00	OCR Scan	PDF	O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
buz 11 bv Abstract: No abstract text available Text: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds	OCR Scan	PDF	BUZ11 BUZ11 buz 11 bv
buz11 Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag Text: rz 7 SCS-THOMSON Ä 7# RKMilLifg «! BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS on Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A • . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	PDF	BUZ11 BUZ11FI O-220 ISOWATT220 CC35701 buz11 motor control BUZ11 avalanche GC35620 airbag
BUZ11S2FI Abstract: BUZ11S2 CT55 Text: • o o a 'ib b o ? T - Z ^ W B U Z11S2 B U Z 1 1 S 2 FI S G S -T H O M S O N IŒ g ïÎ[]« Q O (g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS S 3QE G S-THOMSON TYPE Vqss BUZ11S2 BUZ11S2FI 60 V 60 V ^DS(on 0.04 fi 0.04 fi D 'd■ 30 A 20 A • VE R Y LOW ON-LOSSES	OCR Scan	PDF	BUZ11S2 BUZ11S2FI BUZ11S2FI 500ms CT55
BUZ11 motorola Abstract: No abstract text available Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.	OCR Scan	PDF	BUZ11 b3b725M BUZ11 motorola
Untitled Abstract: No abstract text available Text: SGS-THOMSON œ y [ E J O T Q BUZ11 BUZ11FI * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss 50 V 50 V R dS(oii Id 0.04 Li 0.04 LI 36 A 20 A . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C	OCR Scan	PDF	BUZ11 BUZ11FI O-220 ISOWATT22Û ISOWATT22Q ATT220 BUZ11/FI
IRF722P Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313	OCR Scan	PDF	2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
BUZ11 Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche Text: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03	OCR Scan	PDF	BUZ11 BUZ11FI O-220 ISOWATT220 BUZ11FI BUZ11/FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
c5353 Abstract: Z11A Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY	OCR Scan	PDF	BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A
TP8N10 Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI	OCR Scan	PDF	2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

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BUZ11 Price and Stock

onsemi BUZ11-NR4941

Rochester Electronics LLC BUZ111S

Rochester Electronics LLC BUZ11S2537

onsemi BUZ11_R4941

Rochester Electronics LLC BUZ111SLE3045A

BUZ11 Datasheets (104)

BUZ11 Datasheets Context Search

BUZ11A

BUZ111SL

BUZ11

SPP80N05L

TA9771

buz11 equivalent

BUZ11

irf540n irf640

BUZ11A

P50N05

BUZ11

Untitled

Untitled

BUZ11 motorola

TSD45N50V

buz 11 bv

buz11

BUZ11S2FI

BUZ11 motorola

Untitled

IRF722P

BUZ11

c5353

TP8N10