Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH35060P2 Search Results

    SF Impression Pixel

    CGH35060P2 Price and Stock

    MACOM CGH35060P2

    RF MOSFET GAN HEMT 28V 440206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35060P2 Tray 50
    • 1 -
    • 10 -
    • 100 $172.2624
    • 1000 $172.2624
    • 10000 $172.2624
    		Buy Now
    Mouser Electronics CGH35060P2
    • 1 -
    • 10 -
    • 100 $179.14
    • 1000 $179.14
    • 10000 $179.14
    		Get Quote
    Richardson RFPD CGH35060P2 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    CGH35060P2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF