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    CTLTVS12 Search Results

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    CTLTVS12 Price and Stock

    Central Semiconductor Corp CTLTVS12-BK

    DIDOES
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    Central Semiconductor Corp CTLTVS12-TR-PBFREE

    TVS DIODE 9VWM 18VC TLM2D3D6
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    DigiKey CTLTVS12-TR-PBFREE Digi-Reel 1
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    CTLTVS12-TR-PBFREE Cut Tape 1
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    CTLTVS12 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CTLTVS12 Central Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 9VWM 18VC TLM2D3D6 Original PDF
    CTLTVS12 TR Central Semiconductor Circuit Protection - TVS - Diodes - TVS DIODE 9V 18V 2-TLM2D3D6 Original PDF
    CTLTVS12 TR PBFREE Central Semiconductor TVS DIODE 9VWM 18VC TLM2D3D6 Original PDF

    CTLTVS12 Datasheets Context Search

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    CTLTVS12

    Abstract: PB CTLTVS12
    Text: Product Brief CTLTVS12 TLM2D3D6 package Transient Voltage Suppressor in the miniature TLM2D3D6 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLTVS12 is a space saving, low leakage TVS in the ultra small, ultra low profile TLM2D3D6


    Original     		PDF CTLTVS12 CTLTVS12 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 69x23x43 com/info/CTLTVS12 PB CTLTVS12

    Untitled

    Abstract: No abstract text available
    Text: CTLTVS12 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLTVS12 is a low leakage, fast response TVS packaged in an ultra small, ultra low profile surface mount package. This device is designed to protect sensitive equipment


    Original     		PDF CTLTVS12 CTLTVS12 26-January

    Untitled

    Abstract: No abstract text available
    Text: CTLTVS12 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLTVS12 is a low leakage, fast response TVS packaged in an ultra small, ultra low profile surface mount package. This device is designed to protect sensitive equipment


    Original     		PDF CTLTVS12 CTLTVS12 8x20s) 26-January

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CPZ37R Transient Voltage Suppressor 12 Volt TVS Chip PROCESS DETAILS Die Size 6.7 x 6.7 MILS Die Thickness 3.54 MILS Anode Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au-As/Ag - 13,000Å/6,000Å GEOMETRY


    Original     		PDF CPZ37R CTLTVS12 16-March