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    CY62136CV30 Search Results

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    CY62136CV30 Price and Stock

    Rochester Electronics LLC CY62136CV30LL-70BVI

    IC SRAM 2MBIT PARALLEL 48VFBGA
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    Rochester Electronics LLC CY62136CV30LL-70BVXI

    IC SRAM 2MBIT PARALLEL 48VFBGA
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    DigiKey CY62136CV30LL-70BVXI Bulk 233
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    Cypress Semiconductor CY62136CV30LL-70BVI

    CY62136CV30LL-70BVI
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    Verical CY62136CV30LL-70BVI 2,419 284
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    Rochester Electronics CY62136CV30LL-70BVI 2,419 1
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    Cypress Semiconductor CY62136CV30LL-70BVXI

    CY62136CV30LL-70BVXI
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    Verical CY62136CV30LL-70BVXI 1,537 257
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    Rochester Electronics CY62136CV30LL-70BVXI 2,472 1
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    CY62136CV30 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62136CV30 Cypress Semiconductor Original PDF
    CY62136CV30LL-55BAI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136CV30LL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136CV30LL-55BVI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136CV30LL-55BVI Cypress Semiconductor MoBL 2-Mbit (128K x 16) Static RAM Original PDF
    CY62136CV30LL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136CV30LL-70BAI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136CV30LL-70BVI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136CV30LL-70BVXI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF

    CY62136CV30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		CY62136EV30 CY62136CV30 PDF

    CY62136CV30

    Abstract: CY62136V
    Text: 36CV30 ADVANCE INFORMATION CY62136CV30 MoBL 128K x 16 Static RAM Features power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are placed in a


    Original     		36CV30 CY62136CV30 I/O15) CY62136CV30: CY62136V CY62136V PDF

    CY62136CV

    Abstract: CY62136CV30 CY62136CV33 CY62136V
    Text: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		CY62136CV30/33 CY62136CV I/O15) CY62136CV33 CY62136CV30 CY62136V PDF

    CY62136CV30

    Abstract: CY62136CV30LL CY62136V
    Text: CY62136CV30 MoBL 2-Mbit 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not


    Original     		CY62136CV30 I/O15) CY62136CV CY62136CV33 CY62136CV30LL CY62136V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136V, CY62136CV30/CV33, CY62136EV30 • Ultra-low standby power — Typical standby current: 0.5 µA


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 48-ball 44-pin PDF

    CY62136CV

    Abstract: CY62136CV30 CY62136CV33 CY62136V
    Text: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		CY62136CV30/33 CY62136CV I/O15) CY62136CV33 CY62136CV30 CY62136V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description [1] Features • Very high speed: 45 ns • Temperature ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62136V, CY62136CV30/CV33, and


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 48-ball 44-pin PDF

    CY62136V

    Abstract: CY62136CV30
    Text: 36CV30 CY62136CV30 MoBL 2M 128K x 16 Static RAM Features • • • • • • • • • High Speed: 55 ns and 70 ns availability Voltage range: 2.7V–3.3V Pin Compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz


    Original     		36CV30 CY62136CV30 CY62136V I/O15) CY62136CV30 CY62136V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		CY62136EV30 CY62136CV30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		CY62136EV30 CY62136CV30 48-ball 44-pin PDF

    CY62136CV30

    Abstract: CY62136CV30LL CY62136V
    Text: CY62136CV30 MoBL 2-Mbit 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not


    Original     		CY62136CV30 I/O15) CY62136CV CY62136CV33 CY62136CV30LL CY62136V PDF

    CY62136CV30

    Abstract: CY62136EV30 CY62136EV30LL
    Text: CY62136EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62136EV30 CY62136EV30 I/O15) 48-pin CY62136CV30 CY62136EV30LL PDF

    CY62136VLL-70ZXI

    Abstract: CY62136V CY62136VLL
    Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not


    Original     		CY62136V I/O15) CY62136VLL-70ZXI CY62136VLL PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		CY62136FV30 I/O15) PDF

    an3842

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 48-ball 44-pin an3842 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected


    Original     		CY62136V I/O15) 44-pin CY62136CV30 PDF

    AN1064

    Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
    Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power


    Original     		CY62136FV30 I/O15) AN1064 CY62136EV30 CY62136FV30LL CY62136V PDF

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet PDF

    AN1064

    Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
    Text: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and


    Original     		CY62136FV30 AN1064 CY62136EV30 CY62136FV30LL CY62136V PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    AN3842

    Abstract: CY62136EV30 CY62136FV30 CY62136V of an3842
    Text: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 AN3842 CY62136EV30 CY62136V of an3842 PDF

    AN1064

    Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V footnote12
    Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		CY62136FV30 I/O15) AN1064 CY62136EV30 CY62136FV30LL CY62136V footnote12 PDF

    fbga 12 x 12 thermal resistance

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05087 Spec Title: CY62136V MOBL R 2-MBIT (128K X 16) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62136V MoBL 2-Mbit (128K x 16) Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		CY62136V 44-pin 48-ball fbga 12 x 12 thermal resistance PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 PDF