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    CY7C1021BV33 Price and Stock

    Rochester Electronics LLC CY7C1021BV33-12ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BV33-12ZC Bag 198
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    Rochester Electronics LLC CY7C1021BV33-12VC

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021BV33-12VC Tube 109
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    Rochester Electronics LLC CY7C1021BV33-10ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BV33-10ZC Bag 193
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    Rochester Electronics LLC CY7C1021BV33-10VC

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021BV33-10VC Tube 102
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    Rochester Electronics LLC CY7C1021BV33-12VCT

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021BV33-12VCT Bulk 217
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    CY7C1021BV33 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1021BV33 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021BV33-10BAC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 10ns Original PDF
    CY7C1021BV33-10VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 10ns Original PDF
    CY7C1021BV33-10ZC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 10ns Original PDF
    CY7C1021BV33-12BAC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF
    CY7C1021BV33-12BAI Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF
    CY7C1021BV33-12VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF
    CY7C1021BV33-12VI Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF
    CY7C1021BV33-12ZC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF
    CY7C1021BV33-15BAC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 15ns Original PDF
    CY7C1021BV33-15BAI Cypress Semiconductor 64K x 16 static RAM, 3.3V, 15ns Original PDF
    CY7C1021BV33-15VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 15ns Original PDF
    CY7C1021BV33-15VI Cypress Semiconductor 64K x 16 static RAM, 3.3V, 15ns Original PDF
    CY7C1021BV33-15ZC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 15ns Original PDF
    CY7C1021BV33-8BAC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 8ns Original PDF
    CY7C1021BV33-8VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 8ns Original PDF
    CY7C1021BV33-8ZC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 8ns Original PDF
    CY7C1021BV33L-10VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 10ns Original PDF
    CY7C1021BV33L-10ZC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 10ns Original PDF
    CY7C1021BV33L-12VC Cypress Semiconductor 64K x 16 static RAM, 3.3V, 12ns Original PDF

    CY7C1021BV33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1021BV

    Abstract: CY7C1021BV33
    Text: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 1CY7C1021BV33 CY7C1021BV33 I/O16) CY7C1021BV CY7C1021BV33

    CY7C1021BV33

    Abstract: CY7C1021CV33
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33 CY7C1021BV33

    15BAI

    Abstract: No abstract text available
    Text: 33 CY7C1021BV33 PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BV33 44-pin 400-mil 48-Ball 15BAI

    CY7C1021CV33-10ZC

    Abstract: No abstract text available
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33 CY7C1021CV33-10ZC

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33

    CY7C1021BV33

    Abstract: No abstract text available
    Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 021BV33 CY7C1021BV33 I/O16) CY7C1021BV33

    CY7C1021BV33

    Abstract: No abstract text available
    Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 021BV33 CY7C1021BV33 I/O16) CY7C1021BV33

    CY7C1021BV33

    Abstract: CY7C1021CV33
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33 CY7C1021BV33

    CY7C1021CV33-15ZC

    Abstract: No abstract text available
    Text: 021CV33 CY7C1021CV33 PRELIMINARY 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, 15ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Automatic power-down when deselected


    Original     		PDF 021CV33 CY7C1021CV33 CY7C1021BV33 44-pin 400-mil I/O16) CY7C1021CV33 16Static CY7C1021CV33-15ZC

    401745

    Abstract: cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal
    Text: Cypress Semiconductor Product Qualification Report QTP# 000505 VERSION 2.0 November, 2000 1 Meg Fast Asynchronous SRAM R52FD-3 Technology, Fab 4 CY7C1021BV33 CY7C1019BV33 64K x 16 Static RAM 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		PDF R52FD-3 CY7C1021BV33 CY7C1019BV33 CY7C1021BV33, N5V18-BAI CY62145V18-BAI 401745 cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal

    CY7C1021BV33

    Abstract: No abstract text available
    Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 021BV33 CY7C1021BV33 I/O16) CY7C1021BV33

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    CY7C1021BV33

    Abstract: CY7C1021CV33 TSOP 48 thermal resistance
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 Pb-fre1/02 CY7C1021BV33 TSOP 48 thermal resistance

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    CY7C1021CV33-10ZSXA

    Abstract: AN1064 CY7C1021BV33 CY7C1021CV33
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 CY7C1021CV33-10ZSXA AN1064 CY7C1021BV33

    CY7C1021CV33-15VXC

    Abstract: CY7C1021BV33 CY7C1021CV33 CY7C1021CV33-12ZXC CY7C1021CV33-12ZXI CY7C1021CV33-15ZXC TSOP 48 thermal resistance
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 CY7C1021CV33-15VXC CY7C1021BV33 CY7C1021CV33-12ZXC CY7C1021CV33-12ZXI CY7C1021CV33-15ZXC TSOP 48 thermal resistance

    cy7c1021cv33

    Abstract: No abstract text available
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM


    Original     		PDF CY7C1021CV33 CY7C1021CV33 I/O16)

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    CYC199

    Abstract: sram cross reference CYPRESS SAMSUNG CROSS REFERENCE W24257AK Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference
    Text: High Speed SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Pins Time (ns) (bits) Package W2465AJ 64K 8Kx8 5V 12 28 J:SOJ W24129AJ W24L257AJ,Q 128K 256K 16Kx8 32Kx8 5V 3.3V 12 12, 15 28 28 J:SOJ J:SOJ/Q:STSOP W24257AK,J,Q,S 256K 32Kx8


    Original     		PDF W2465AJ W24129AJ W24L257AJ 16Kx8 32Kx8 W24257AK W24512AJ W26L010AJ AT-12 CYC199 sram cross reference CYPRESS SAMSUNG CROSS REFERENCE Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference

    CY7C1021CV33-10ZC

    Abstract: CY7C1021BV33 CY7C1021CV33 TSOP 48 thermal resistance TSOP 48 thermal resistance junction to case CY7C1021CV33-10VXI FBGA PACKAGE thermal resistance
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33-10ZC CY7C1021BV33 TSOP 48 thermal resistance TSOP 48 thermal resistance junction to case CY7C1021CV33-10VXI FBGA PACKAGE thermal resistance

    CY7C1021CV33-15VXC

    Abstract: CY7C1021CV33-12ZXC CY7C1021CV33-15ZXC TSOP 86 Package AN1064 CY7C1021BV33 CY7C1021CV33
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1021CV33 is a high performance CMOS static RAM


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 CY7C1021CV33-15VXC CY7C1021CV33-12ZXC CY7C1021CV33-15ZXC TSOP 86 Package AN1064 CY7C1021BV33

    CY7C1338-100AXC

    Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
    Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12


    Original     		PDF CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    WINBOND cross reference

    Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
    Text: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X


    Original     		PDF W2465A IS61C64AH 300-mil UT6164 CY7C185 IDT7164 W24257A CY7C199 IDT71256SA UT61256 WINBOND cross reference winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199