Untitled
Abstract: No abstract text available
Text: IRKJ165-04 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition)
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IRKJ165-04
Current165
Voltage400
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKE165-14 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKE165-14
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKD166-12N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKD166-12N
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKE165-14N Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKE165-14N
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKC165-14 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition)
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IRKC165-14
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: HD165/04-1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)400 @Temp. (øC) (Test Condition)25’
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HD165/04-1
Current165
Voltage400
StyleStF-M12
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Untitled
Abstract: No abstract text available
Text: IRKC165-04N Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition)
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IRKC165-04N
Current165
Voltage400
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKE166-14 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKE166-14
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: 1N5907C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage5 I(PPM) Max.(A)Pk.Pulse Current165 V(C) Nom. (V) Clamping Voltage8.6
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1N5907C
Current165
StyleDO-13
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Untitled
Abstract: No abstract text available
Text: IRKE165-08 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKE165-08
Current165
Voltage800
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKJ165-14N Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition)
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IRKJ165-14N
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: HDI165/14-1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)400 @Temp. (øC) (Test Condition)25’
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HDI165/14-1
Current165
StyleStF-M12
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Untitled
Abstract: No abstract text available
Text: MDD142-14N1 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0k¥ V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25õ
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MDD142-14N1
Current165
Current20m
HL080HD6
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Untitled
Abstract: No abstract text available
Text: IRKD165-14 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKD165-14
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKJ166-12N Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition)
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IRKJ166-12N
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: IRKD165-14N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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IRKD165-14N
Current165
Current35m
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Untitled
Abstract: No abstract text available
Text: HD165/14-1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current165 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)400 @Temp. (øC) (Test Condition)25’
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HD165/14-1
Current165
StyleStF-M12
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Untitled
Abstract: No abstract text available
Text: MDD142-18N1 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.8k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0k¥ V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25õ
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MDD142-18N1
Current165
Current20m
HL080HD6
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D8252C
Abstract: No abstract text available
Text: fax id: 7030 CY74FCT16374T CY74FCT162374T C'i- 16-Bit Registers C Y74FCT162374 T Features: Features • Balanced 24 mA output drivers • Reduced system switching noise • Low power, pin-compatible replacement for ABT functions • FCT-E speed at 3.7 ns • Power-off disable outputs permits live insertion
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CY74FCT16374T
CY74FCT162374T
16-Bit
Y74FCT162374
CY74FC
T162374T
D8252C
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PDF
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NI 6501
Abstract: No abstract text available
Text: FAST CMOS 1 8 -BIT R E G I S T E R E D TR A N S C E I V E R IDT54/74FCT16501AT/CT/ET I D T5 4 / 7 4 F C T 1 62501 A T / C T / E T I DT 5 4/ 7 4 F C T 1 62H501 A T / C T / E T CM O S technology. These high-speed, low-pow er 18-bit reg istered bus transceivers com bine D-type latches and D-type
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IDT54/74FCT16501AT/CT/ET
62H501
18-bit
250ps
NI 6501
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PDF
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. FAST CM OS 18-BIT UNIV ER SA L BUS T R A N S C E IV E R WITH 3-STATE O U TP U TS IDT74FCT1 6601 AT/CT/ET IDT74 FCT 162601 AT/CT/ET FEATURES: DESCRIPTION: • C o m m o n features: 0.5 M IC R O N C M O S T e c h n o lo g y
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18-BIT
IDT74FCT1
IDT74
16601CT
16601ET
162601ET
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 1 8 -BIT RE GI S T E R E D TR A N S C E I V E R IDT54/74FCT1 6500AT/CT/ET IDT54/74FCT162500AT/CT/ET bit registered transceivers are built using advanced dual metal CM O S technology. These high-speed, low-pow er 18-bit reg • C o m m o n features:
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IDT54/74FCT1
6500AT/CT/ET
IDT54/74FCT162500AT/CT/ET
18-bit
16500AT
1650OCT
16500ET
162500AT
162500C
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