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    D600K Search Results

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    D600K Price and Stock

    Rochester Electronics LLC 2SD600KE

    TRANS NPN 120V 1A TO-126
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD600KE Bulk 1,110
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27
    		Buy Now

    Rochester Electronics LLC 2SD600KF

    TRANS NPN 120V 1A TO-126
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD600KF Bulk 1,902
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16
    		Buy Now

    Same Sky AME-1000D-600K

    ROTARY ENCODER OPTICAL 1000PPR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AME-1000D-600K Box 64
    • 1 -
    • 10 -
    • 100 $24.24391
    • 1000 $24.24391
    • 10000 $24.24391
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    onsemi 2SD600KE

    2SD600 - Bipolar NPN Transistor, 1A 100V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SD600KE 31,362 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
    • 10000 $0.221
    		Buy Now

    onsemi 2SD600KF

    2SD600 - Bipolar NPN Transistor, 1A 100V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SD600KF 43,937 1
    • 1 $0.1517
    • 10 $0.1517
    • 100 $0.1426
    • 1000 $0.1289
    • 10000 $0.1289
    		Buy Now

    D600K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d600k

    Abstract: kd600k D600K to 126 transistor D600k KTD600K TO126 package D600K-Y d600 D600k transistor KEC Lot No. Year
    Text: SEMICONDUCTOR D600K MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K D600K Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D600K D600K 3 hFE Grade Y O,Y,GR 4 Lot No. 816 98.06.23 Revision No : 00 8 Year


    Original     		KTD600K O-126 D600K d600k kd600k D600K to 126 transistor D600k KTD600K TO126 package D600K-Y d600 D600k transistor KEC Lot No. Year PDF

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k PDF

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K PDF

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600 PDF

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600 PDF

    D600K

    Abstract: 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600
    Text: 注文コード No. N 3 4 6 G 2SB631, 631K / 2SD600, 600K N346G 41400 半導体ニューズ No.346E（’ 91 大信号トランジスタ D.B.Vol.1 No.346F）とさしかえてください。 2SB631, 631K 2SD600, 600K 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


    Original     		2SB631, 2SD600, N346G 2SB631K, D600K B631K, D600K 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600 PDF

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


    OCR Scan     		K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986 PDF

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan     		EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600 PDF

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan     		EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126 PDF

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


    OCR Scan     		1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895 PDF

    c2314

    Abstract: c3807 C3502 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127
    Text: S4PfVO X O — 1 2£> O :T0-126ML, *:T0-126LP, Unmarked :T0-126. \ \ Type T r a n s i s t o r s ♦¡D arlington V CEO I \ V C \ (mA) \ 18 2 0 2 5 3 5 4 5 5 0 7 0 6 0 8 0 10 0 12 0 16 0 A1404 A15380 C3598 <39530 200 A1723 C4271 C4660O A1402 C3596 A15360


    OCR Scan     		T0-126ML T0-126LP, T0-126. A1352 A1380 A1406 A14780 A1540O C3416 C3502 c2314 c3807 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127 PDF