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    Text: SAMSUNG ELECTRONICS INC b7E T> • 7Tb414E DD17b05 ÜDH «SflGK KM68V257 CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35 ns (Max.) • Low Power Dissipation Standby (TTL) : 3mA (Max.)


    OCR Scan     		PDF 7Tb414E DD17b05 KM68V257 KM68V257P/J-20: KM68V257P/J-25: KM68V257P/J-35: KM68V257P: 28-pin KM68V257J: