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    DFN2020

    Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
    Text: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same


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    PDF DMS2220LFDB DMS2120LFWB DFN2020 DFN3020 DMP2160UFDB, DFN2020 DMP2160UFDB DMS2220LFDB power diode package DFN3020 632 diode DMP2160UFDB

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    PDF ZXTC6719MC 100mV -220mV DS31928 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current


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    PDF ZXTD618MC 150mV AEC-Q101 DFN3020B-3 DS31931

    DMS2120LFWB

    Abstract: DFN3020B-8 DMS2120LFWB-7 J-STD-020D
    Text: DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V


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    PDF DMS2120LFWB AEC-Q101 DFN3020B-8 DS31667 DMS2120LFWB DFN3020B-8 DMS2120LFWB-7 J-STD-020D

    DFN3020B-8

    Abstract: 2.7A SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V


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    PDF DS35088 DFN3020B-8 2.7A SOT23-6

    AA112A

    Abstract: IPC-7351A
    Text: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10


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    PDF AP02002) AP02001) IPC-7351A) DFN0402â DFN0603â DFN0606â IPC-7351A, AA112A IPC-7351A

    ZXTC6719MCTA

    Abstract: No abstract text available
    Text: DATE: 20th December, 2010 PCN #: 2029 PCN Title: Package End of Life for the MLP322 and MLP832 Packages Dear Customer: This is an announcement of change s to products that are currently being


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    PDF MLP322 MLP832 DFN2020B-3 ZXTC6719MCTA

    DFN2015H4-6

    Abstract: DFN3020H4-6
    Text: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • Micropower operation Operation with magnetic field of either north or south pole omnipolar 2.5V to 5.5V battery operation Chopper stabilized


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    PDF AH1822 DFN2015-6 DFN3020-6: AH1822 DFN2015H4-6 DFN3020H4-6

    DFN3020B-8

    Abstract: ZXTPS718MCTA
    Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -20V • RSAT = 64mΩ


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    PDF ZXTPS718MC 500mv -220mV DFN3020B-8 J-STD-020 DS31937 DFN3020B-8 ZXTPS718MCTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    PDF ZXTC6719MC 100mV -220mV DS31928

    ZXTD618MC

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current


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    PDF ZXTD618MC 150mV AEC-Q101 DS31931 ZXTD618MC

    Untitled

    Abstract: No abstract text available
    Text: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • AH1822 is comprised of two Hall effect plates and an open-drain output driver, mainly designed for battery-operation, hand-held equipment such as Cellular and Cordless Phone, PDA . The


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    PDF AH1822 AH1822

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V


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    PDF DS35088

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


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    PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    DMS2120LFWB

    Abstract: No abstract text available
    Text: DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V


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    PDF DMS2120LFWB AEC-Q101 DFN3020B-8 J-STD-020D DS31667 DMS2120LFWB

    Diodes Marking K7

    Abstract: No abstract text available
    Text: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • Micropower operation Operation with magnetic field of either north or south pole omnipolar 2.5V to 5.5V battery operation Chopper stabilized


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    PDF AH1822 DFN2015-6 DFN3020-6: AH1822 Diodes Marking K7

    DFN3020B-8

    Abstract: ZXTD617MC ZXTD617MCTA
    Text: A Product Line of Diodes Incorporated ZXTD617MC DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 15V RSAT = 45 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance


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    PDF ZXTD617MC 100mV DFN3020B-8 J-STD-020 DS31930 DFN3020B-8 ZXTD617MC ZXTD617MCTA

    DFN3020B-8

    Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor


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    PDF ZXTC6720MC -185mV DFN3020B-8 J-STD-020 MIL-STD-202, ZXTC6719MC DS31929 DFN3020B-8 ZXTC6719MC ZXTC6720MC ZXTC6720MCTA

    ZXTD717MC

    Abstract: DFN3020B-8 ZXTD717MCTA
    Text: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance


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    PDF ZXTD717MC -140mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31934 ZXTD717MC DFN3020B-8 ZXTD717MCTA

    DFN3020B-8

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -40V • RSAT = 104mΩ


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    PDF ZXTPS720MC 500mv -220mV DFN3020B-8 J-STD-020 DS31938 DFN3020B-8

    DFN3020B-8

    Abstract: ZXTPS717MC DS3193
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -12V • RSAT = 65mΩ


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    PDF ZXTPS717MC 500mv -140mV DFN3020B-8 J-STD-020 DS31936 DFN3020B-8 ZXTPS717MC DS3193

    ZXTC6718MCTA

    Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic
    Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor ƒ VCEO =20 ƒ RSAT = 47 mΩ ƒ IC = 4.5A PNP Transistor ƒ VCEO = -20V ƒ


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    PDF ZXTC6718MC 150mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31927 ZXTC6718MCTA DFN3020B-8 ZXTC6718MC marking db2 peak hold ic

    DFN3020B-8

    Abstract: Marking G2 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V


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    PDF DFN3020B-8 DS35087 DFN3020B-8 Marking G2 SOT23-6