Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
|
Original
|
DP030S
-100mA/-10mA)
DN030S
DP030S
OT-23F
KST-2108-000
|
PDF
|
DN030U
Abstract: DP030U
Text: DN030U NPN Silicon Transistor Features PIN Connection • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application
|
Original
|
DN030U
100mA/10mA)
DP030U
OT-323
OT-323F
KSD-T5D007-000
DN030U
DP030U
|
PDF
|
DN030S
Abstract: DP030S N01 MARKING CODE marking N01
Text: DN030S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application PIN Connection
|
Original
|
DN030S
100mA/10mA)
DP030S
OT-23F
KSD-T5C008-000
DN030S
DP030S
N01 MARKING CODE
marking N01
|
PDF
|
N01 marking
Abstract: T 2109 DN030S DP030S
Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application
|
Original
|
DN030S
100mA/10mA)
DP030S
OT-23F
KST-2109-000
100mA
300mA
100mA,
N01 marking
T 2109
DN030S
DP030S
|
PDF
|
DN030E
Abstract: Transistor IC 4009 DATASHEET Datasheet ic 4009 4009 kst40 4009 be 4009 NOT GATE IC in 4009 N01 marking
Text: DN030E Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030E • Switching Application
|
Original
|
DN030E
100mA/10mA)
DP030E
OT-523F
KST-4009-000
100mA
300mA
100mA,
DN030E
Transistor
IC 4009 DATASHEET
Datasheet ic 4009
4009
kst40
4009 be
4009 NOT GATE IC
in 4009
N01 marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030S
|
Original
|
DP030S
DN030S
KST-2108-000
|
PDF
|
DP030
Abstract: Transistor DN030
Text: Z DP030 Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030 • Switching Application
|
Original
|
DP030
-100mA/-10mA)
DN030
KST-9087-000
-300mA
-100mA,
-10mA
DP030
Transistor
DN030
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DN030U NPN Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = 0.1V Typ. @I C/ I B= 100m A/ 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP030U • Swit ching Applicat ion
|
Original
|
DN030U
DP030U
OT-323
KSD-T5D007-000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Z DP030 Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030
|
Original
|
DP030
DN030
KST-9087-000
|
PDF
|
DP030E
Abstract: Transistor DN030E kst40
Text: DP030E Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030E • Switching Application
|
Original
|
DP030E
-100mA/-10mA)
DN030E
OT-523F
KST-4010--000
-300mA
-100mA,
-10mA
DP030E
Transistor
DN030E
kst40
|
PDF
|
DN030E
Abstract: DP030E KST-4010-000 kst40
Text: DP030E Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030E
|
Original
|
DP030E
-100mA/-10mA)
DN030E
OT-523F
KST-4010--000
-300mA
-100mA,
-10mA
DN030E
DP030E
KST-4010-000
kst40
|
PDF
|
DN030
Abstract: Transistor DP030
Text: DN030 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application
|
Original
|
DN030
100mA/10mA)
DP030
DNO30
KST-9082-000
100mA
300mA
100mA,
DN030
Transistor
DP030
|
PDF
|
DN030U
Abstract: DP030U Transistor N01 marking
Text: DN030U Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application
|
Original
|
DN030U
100mA/10mA)
DP030U
OT-323F
KST-3054-000
100mA
300mA
100mA,
DN030U
DP030U
Transistor
N01 marking
|
PDF
|
E4437B
Abstract: smiq vector signal generator smiq DN030 MSK3020 PRBS-9 CC2420 CC2430 CC2520 CC2530
Text: Design Note DN030 ACR Measurements on IEEE 802.15.4 Systems By Espen Wium Keywords • • • • • 1 • • • • Selectivity RF IEEE 802.15.4 ACR Measurements CC2430 CC2420 CC2520 CC2530 Introduction Selectivity is an important property of any RF receiver, and describes its ability to
|
Original
|
DN030
CC2430
CC2420
CC2520
CC2530
E4437B
smiq vector signal generator
smiq
DN030
MSK3020
PRBS-9
CC2420
CC2430
CC2520
CC2530
|
PDF
|
|
DN030
Abstract: DP030 SUT575EF
Text: SUT575EF Semiconductor Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Both DN030 chip and DP030 chip in SOT-563F package
|
Original
|
SUT575EF
DN030
DP030
OT-563F
OT-563F
KSD-T5U007-000
SUT575EF
|
PDF
|
DN030S
Abstract: DP030S kst21 kst210
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
|
Original
|
DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
kst21
kst210
|
PDF
|
DN030S
Abstract: DP030S
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S
|
Original
|
DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUT575EF Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Both DN030 chip and DP030 chip in SOT-563F package Package : SOT-563F
|
Original
|
SUT575EF
DN030
DP030
OT-563F
OT-563F
KSD-T5U007-001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DN030S NPN Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = 0.1V Typ. @I C/ I B= 100m A/ 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP030S • Swit ching Applicat ion
|
Original
|
DN030S
DP030S
KSD-T5C008-000
|
PDF
|
DN030U
Abstract: DP030U KST-3055-000 kst30
Text: DP030U Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030U
|
Original
|
DP030U
-100mA/-10mA)
DN030U
OT-323F
KST-3055-000
-300mA
-100mA,
-10mA
DN030U
DP030U
KST-3055-000
kst30
|
PDF
|
DN030
Abstract: DP030
Text: DN030 NPN Silicon Transistor PIN Connection C E B B • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application
|
Original
|
DN030
100mA/10mA)
DP030
DNO30
KSD-T0A002-000
DN030
DP030
|
PDF
|
DN030
Abstract: DP030 SUT575EF
Text: SUT575EF Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Both DN030 chip and DP030 chip in SOT-563F package Package : SOT-563F
|
Original
|
SUT575EF
DN030
DP030
OT-563F
OT-563F
KSD-T5U007-001
SUT575EF
|
PDF
|
3055
Abstract: transistor 3055 3055 transistor DN030U DP030U kst30
Text: DP030U Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030U
|
Original
|
DP030U
-100mA/-10mA)
DN030U
OT-323F
KST-3055-000
-300mA
-100mA,
-10mA
3055
transistor 3055
3055 transistor
DN030U
DP030U
kst30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DP030E Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030E
|
Original
|
DP030E
DN030E
KST-4010--000
|
PDF
|