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    Untitled

    Abstract: No abstract text available
    Text: m ü M ► t . * - H ^ m * 1 f tm- r'h . r*-*«"* + • *■ + ■*•■- - * » » -. *-# ■ •*- -* 4 r ■■ *• v *■ * —■* r ,«i t. —.1^ * t m* t îd f^ +«•«T-* * j- : *■ r ■* -f * -r -r4' ■l" ^V*' '".’T r


    OCR Scan     		PDF A2919SB A2919SLB Q5G433Ã EP-008B 00Q77T5

    Diode 5A

    Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
    Text: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF DSGM33Ã TMPD459 TMPD914 TMPD2835 TMP02836 TMPD2837 TMPD2838 TMPD4148 TMPD4153 TMPD4154 Diode 5A bkd marking TMPD4150

    0/k 2897 transistor

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 ODOBbTS 3 ■ ALGR T-91-Û1 PROCESS FDB Process FDB PNP High-Power Transistor Process FDB is a PNP silicon double-diffused epi­ taxial planar device designed for use in high-power amplifier and switching circuits. Its NPN complement


    OCR Scan     		PDF T-91-Ã DSGM33Ã T-91-01 0/k 2897 transistor