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Fairchild Semiconductor Corporation NDT410EL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NDT410EL		2,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	NDT410EL		900			1 - 10 - 100 - 1000 - 10000 -	Buy Now

DT410EL Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DT410EL		Diodes	TRANS MOSFET N-CH 100V 2.1A 4SOT-223		Original	PDF
DT410EL		Diodes	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR		Original	PDF
DT410EL		Vishay	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR		Scan	PDF
DT410EL-F		Diodes	Transistor Mosfet N-CH 100V 2.1A 4SOT-223		Original	PDF

DT410EL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RCA 528 Abstract: transistor RCA 528 DT410EL Text: DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim Min Max A A 6.30 6.71 B	Original	DT410EL OT-223 OT-223 DS11601 RCA 528 transistor RCA 528 DT410EL	PDF
DT410EL Abstract: No abstract text available Text: DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim Min Max A A 6.30 6.71 B	Original	DT410EL OT-223 OT-223 DS11601 DT410EL	PDF
Q 371 Transistor Abstract: tl 72 oz DS11 DT410EL Text: DT410EL VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance	OCR Scan	DT410EL OT-223 OT-223 DS11601 DT410EL Q 371 Transistor tl 72 oz DS11	PDF
Untitled Abstract: No abstract text available Text: DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim - A -► i I D c '	OCR Scan	DT410EL OT-223 OT-223 DS11601	PDF
Untitled Abstract: No abstract text available Text: DT410EL VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR [L IT E R ]!!' POWE R SEMICONDUCTOR j Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223	OCR Scan	DT410EL OT-223 DS11601	PDF
FZ 300 R 06 KL Abstract: 34B SOT NDT410EL L-253 Text: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS	OCR Scan	NDT410EL NDT410EL OT-223 FZ 300 R 06 KL 34B SOT L-253	PDF