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Catalog Datasheet	MFG & Type	PDF	Document Tags
BF1005SR Abstract: BF1005 BF1005S BF1005SW Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW
BF1005 Abstract: VPS05178 Text: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178
BF1009SR Abstract: No abstract text available Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR
BF1009SW Abstract: No abstract text available Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW
VPS05178 Abstract: No abstract text available Text: BF 1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	1009S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178
a 1009 Abstract: VPS05178 Text: BF 1009 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9 V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05178 EHA07215 OT-143 May-05-1999 200MHz a 1009 VPS05178
1012S Abstract: VPS05178 Text: BF 1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	1012S VPS05178 EHA07215 OT-143 Dec-06-1999 200MHz 1012S VPS05178
BF1005S Abstract: VPS05178 Text: BF1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178
BF1005SR Abstract: marking NZs Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs
BF1005SR Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,
BF1009SW Abstract: BF1009S BF1009SR BF1009W Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W
VPS05178 Abstract: No abstract text available Text: BF 1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178
BF1009S Abstract: VPS05178 Text: BF1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178
BF1009SW Abstract: marking g1s Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s

1009SW Abstract: No abstract text available Text: BF 1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	1009SW VPS05605 EHA07215 OT-343 May-05-1999 200MHz 1009SW
VPS05178 Abstract: No abstract text available Text: BF 1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	1005S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178
Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,
BF1009SW Abstract: BF1009 marking code g2s Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s
bf1012s Abstract: BF1012 VPS05178 Text: BF1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178
a31s Abstract: No abstract text available Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	EHA07215 Q62702-F1487 OT-143 200MHz a31s
Untitled Abstract: No abstract text available Text: SIEMENS BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network , D rain AG C o - X . HF oInput G2 I H F Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	EHA07215 62702-F1487 200MHz
Untitled Abstract: No abstract text available Text: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215	OCR Scan	PDF	EHA07215 Q62702-F1613 OT-143 200MHz
Untitled Abstract: No abstract text available Text: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network X AGC o HF o Input Drain G2 ! HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	EHA07215 T-143 62702-F1498
siemens MOSFET 14 Abstract: Marking G1s Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s

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siemens MOSFET 14