2SC5551
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
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2SC5551A
ENA1118
300mA)
250mm20
A1118-4/4
2SC5551
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1118A
2SC5551A
300mA,
300mA)
250mm2
A1118-6/6
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A11182
Abstract: 2sc5551a A1118-4/4
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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Original
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PDF
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ENA1118A
2SC5551A
300mA)
250mm2
A1118-6/6
A11182
2sc5551a
A1118-4/4
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Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
|
Original
|
PDF
|
ENA1118
2SC5551A
300mA)
250mm20
A1118-4/4
|
Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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Original
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PDF
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2SC5551A
ENA1118A
300mA)
250mm2Ã
A1118-6/6
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