FA01317B Search Results

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Text: bSM'îflS'î 001Ô071 MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì SO FA01317B G aA s F E T H Y B R ID 1C DESCRIPTION F A 0 1 3 1 7 is RF Hybrid IC designed fo r 1 .5 G H z band small size hand held radio. FEATURES • High efficiency 3 5 % • High po w er 3 0 . 5 (dBm )