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    FDME820NZT Price and Stock

    onsemi FDME820NZT

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey FDME820NZT Cut Tape 6,297 1
    • 1 $1.42
    • 10 $0.898
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    FDME820NZT Digi-Reel 6,297 1
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    FDME820NZT Reel 5,000
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    Avnet Americas FDME820NZT Reel 0 Weeks, 2 Days 2,500
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    FDME820NZT Reel 20 Weeks 5,000
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    Mouser Electronics FDME820NZT 1,461
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    Verical FDME820NZT 171,000 879
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    Newark FDME820NZT Cut Tape 3,362 1
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    FDME820NZT Reel 5,000
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    Onlinecomponents.com FDME820NZT
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    Rochester Electronics FDME820NZT 171,000 1
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    TME FDME820NZT 1
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    Richardson RFPD FDME820NZT 5,000
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    Avnet Silica FDME820NZT 21 Weeks 5,000
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    EBV Elektronik FDME820NZT 22 Weeks 5,000
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    Flip Electronics FDME820NZT 199,715
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    Rochester Electronics LLC FDME820NZT

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDME820NZT Bulk 760
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    • 1000 $0.39
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    Flip Electronics FDME820NZT-P

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey FDME820NZT-P Reel 517
    • 1 -
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    • 1000 $1.3
    • 10000 $1.3
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    onsemi FDME820NZT-P

    MOSFET N-CH 20V 9A MICROFET
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    DigiKey FDME820NZT-P Reel
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    Avnet Americas FDME820NZT-P Reel 0 Weeks, 2 Days 2,381
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    • 10000 $0.25
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    Rochester Electronics FDME820NZT-P 4,916 1
    • 1 $0.2986
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    • 100 $0.2807
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    Flip Electronics FDME820NZT-P 195,517
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    Aptina Imaging FDME820NZT_P

    FDME820NZT_P
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    Verical FDME820NZT_P 4,916 1,183
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    FDME820NZT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDME820NZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 20V 9A MICROFET 1.6 Original PDF

    FDME820NZT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description ̈ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME820NZT

    Untitled

    Abstract: No abstract text available
    Text: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME820NZT

    Untitled

    Abstract: No abstract text available
    Text: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME820NZT FDME820NZT