FDPF10N50UT
Abstract: fdpf10n50
Text: UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transistors are p roduced using Fa irchild’s proprietary, planar stripe,
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FDP10N50U
FDPF10N50UT
FDPF10N50UT
fdpf10n50
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transistors are p roduced using Fa irchild’s proprietary, planar stripe,
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Original
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FDP10N50U
FDPF10N50UT
FDPF10N50UT
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PDF
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