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    FDR836P Price and Stock

    Rochester Electronics LLC FDR836P

    P-CHANNEL MOSFET
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    DigiKey FDR836P Bulk 333
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    Fairchild Semiconductor Corporation FDR836P

    Small Signal Field-Effect Transistor, 6.1A, 20V, P-Channel MOSFET '
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    Rochester Electronics FDR836P 15,000 1
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    FDR836P Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDR836P Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDR836P Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Original PDF
    FDR836P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDR836P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDR836P Fairchild Semiconductor P-Channel 2.5V Specified MOSFET Scan PDF

    FDR836P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    836p

    Abstract: if 836p FDR836P
    Text: FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited


    Original     		PDF FDR836P 836p if 836p FDR836P

    Untitled

    Abstract: No abstract text available
    Text: FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited


    Original     		PDF FDR836P

    SOIC-16

    Abstract: FDR836P
    Text: June 1997 ADVANCE INFORMATION FDR836P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDR836P 70oC/W 125oC/W 135oC/W FDR836P SOIC-16

    CBVK741B019

    Abstract: F63TNR F852 FDR836P
    Text: FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited


    Original     		PDF FDR836P CBVK741B019 F63TNR F852 FDR836P

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FDR4420A

    Abstract: FDC637AN Complementary MOSFETs FDR8305N FDS8928 FDR6580 FDR6674A FDR6678A FDS8928A FDS8958A
    Text: Discrete MOSFET SuperSOT-8 Products RDS ON Max (Ohms) @ VGS = VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) - 0.022 0.028 - 16.2 4.5 0.8 Config. Maximum Rating ID (A) PD (W) SuperSOT-8 N-Channel FDR8305N 20 Dual NDH831N 20 Single FDR6580 20


    Original     		PDF FDR8305N NDH831N FDR6580 FDR6674A FDR4420A FDR6678A FDC637AN NDH8321C FDR836P FDR838P FDR4420A FDC637AN Complementary MOSFETs FDR8305N FDS8928 FDR6580 FDR6674A FDR6678A FDS8928A FDS8958A

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D June 1997 AD VANC E INFORM ATIO N SEM ICONDUCTO R T M FDR836P P-ChannelLogic Level Enhancement Mode Field Effect Transistor G eneral Description Features SuperSO T -8 P-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary,


    OCR Scan     		PDF FDR836P 026in;

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDR836P P-Channel 2.5V Specified MOSFET General Description Features S u p e rS O T -8 P -C hannel en han cem en t m ode power • -6.1 A, -2 0 V. R ds on = 0 .0 3 0 W @ V QS = -4 .5 V field effect transistors are produced using Fairchild’s


    OCR Scan     		PDF FDR836P

    if 836p

    Abstract: MARKING W1 AD sl 0380 sl 0380 r CBVK741B019 F63TNR FDR835N FDR836P
    Text: SEMICONDUCTOR tm FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOT -8 P-Channel enhancement mode power • -6.1 A, -20 V. Rds on = 0.030 w @ VQS = -4.5 V field effect transistors are produced using Fairchild’s R d s ,o n , =


    OCR Scan     		PDF FDR836P 43iR-RÃ if 836p MARKING W1 AD sl 0380 sl 0380 r CBVK741B019 F63TNR FDR835N FDR836P