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onsemi FDW2601NZ MOSFET 2N-CH 30V 8.2A 8TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDW2601NZ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FDW2601NZ Power Field-Effect Transistor, 8.2A, 30V, 0.015ohm, 2-Element, N-Channel, MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDW2601NZ		26		1	1 $0.4117 10 $0.4117 100 $0.387 1000 $0.3499 10000 $0.3499	Buy Now

FDW2601NZ Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDW2601NZ		Fairchild Semiconductor	30V Dual N-Channel 2.5V Specified PowerTrench MOSFET		Original	PDF
FDW2601NZ		Fairchild Semiconductor	Dual N-Channel 2.5V Specified PowerTrench MOSFET		Original	PDF
FDW2601NZ		Fairchild Semiconductor	Dual N-Channel 2.5V Specified PowerTrench MOSFET		Original	PDF
FDW2601NZ_NL		Fairchild Semiconductor	30V Dual N-Channel 2.5V Specified PowerTrench MOSFET		Original	PDF

FDW2601NZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2601NZ Abstract: FDW2601NZ 2601N Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDW2601NZ FDW2601NZ 2601NZ 2601N	PDF
FDW2601NZ Abstract: N-Channel 2.5V 2601NZ Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDW2601NZ FDW2601NZ N-Channel 2.5V 2601NZ	PDF
2601NZ Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3 Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDW2601NZ 2601NZ 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3	PDF
5e8 marking Abstract: 66E-3 Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDW2601NZ FDW2601NZ 5e8 marking 66E-3	PDF
Untitled Abstract: No abstract text available Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDW2601NZ FDW2601NZ	PDF