Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLK012WF Search Results

    SF Impression Pixel

    FLK012WF Price and Stock

    FUJITSU Limited FLK012WF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FLK012WF 8
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components FLK012WF 24
    • 1 $41.86
    • 10 $39.767
    • 100 $37.674
    • 1000 $37.674
    • 10000 $37.674
    Buy Now

    Fuji Electric Co Ltd FLK012WF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK012WF 12
    • 1 $50.232
    • 10 $47.7204
    • 100 $45.2088
    • 1000 $45.2088
    • 10000 $45.2088
    Buy Now
    FLK012WF 4
    • 1 $50.232
    • 10 $50.232
    • 100 $50.232
    • 1000 $50.232
    • 10000 $50.232
    Buy Now

    FLK012WF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK012WF Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLK012WF Unknown FET Data Book Scan PDF

    FLK012WF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLK012WF

    Abstract: No abstract text available
    Text: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general


    Original
    FLK012WF FLK012WF PDF

    FLK012

    Abstract: k d 998 0
    Text: FLK012WF X - k i i B a n d P o w e r it/A s I E I s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C Symbol (tern Condition Rating Ufirit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 1.15 w Total Power B N p M Pt Storage Temperature


    OCR Scan
    FLK012WF 3000Q. Out99 FLK012 k d 998 0 PDF

    Untitled

    Abstract: No abstract text available
    Text: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general


    OCR Scan
    FLK012WF FLK012WF PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan
    FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan
    PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan
    FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK PDF