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    FM1608 Price and Stock

    Walsin Technology Corporation WLFM160808M2R2PP

    INDUCTOR FIXED 2.2UH 0603
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    DigiKey WLFM160808M2R2PP Digi-Reel 16,443 1
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    WLFM160808M2R2PP Cut Tape 16,443 1
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    WLFM160808M2R2PP Reel 12,000 4,000
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    Mouser Electronics WLFM160808M2R2PP
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    TDK Corporation TFM160808ALC-1R0MTAA

    FIXED IND 1UH 1.8A 155 MOHM SMD
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    DigiKey TFM160808ALC-1R0MTAA Reel 13,000 3,000
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    Avnet Americas TFM160808ALC-1R0MTAA Reel 12 Weeks 3,000
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    Mouser Electronics TFM160808ALC-1R0MTAA
    • 1 $0.29
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    TTI TFM160808ALC-1R0MTAA Reel 3,000
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    Avnet Abacus TFM160808ALC-1R0MTAA 19 Weeks 3,000
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    Walsin Technology Corporation WLFM160808M1R0PP

    INDUCTOR FIXED 1.0UH 0603
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    DigiKey WLFM160808M1R0PP Cut Tape 5,684 1
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    WLFM160808M1R0PP Digi-Reel 5,684 1
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    Mouser Electronics WLFM160808M1R0PP 3,241
    • 1 $0.1
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    Walsin Technology Corporation WLFM160808MR47PP

    INDUCTOR FIXED 0.47UH 0603
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    DigiKey WLFM160808MR47PP Cut Tape 5,210 1
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    WLFM160808MR47PP Digi-Reel 5,210 1
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    WLFM160808MR47PP Reel 4,000 4,000
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    Mouser Electronics WLFM160808MR47PP 6,808
    • 1 $0.1
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    TDK Corporation TFM160808BLD-R24MTCA

    IND 240NH 3.4A 33MOHM -40~125
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    DigiKey TFM160808BLD-R24MTCA Cut Tape 5,130 1
    • 1 $0.39
    • 10 $0.272
    • 100 $0.1882
    • 1000 $0.17768
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    TFM160808BLD-R24MTCA Digi-Reel 5,130 1
    • 1 $0.39
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    TFM160808BLD-R24MTCA Reel 3,000 3,000
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    Avnet Americas TFM160808BLD-R24MTCA Reel 12 Weeks 3,000
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    • 10000 $0.17772
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    Mouser Electronics TFM160808BLD-R24MTCA 5,805
    • 1 $0.4
    • 10 $0.278
    • 100 $0.212
    • 1000 $0.172
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    Find more FM1608 price and stock on Findchips.com

    FM1608 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FM1608 Unknown Original PDF
    FM1608 Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608 Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608 STMicroelectronics High Efficiency Fast Recovery Rectifier Diodes Scan PDF
    FM1608-120 Unknown Original PDF
    FM1608-120-P Ramtron International NVRAM, FRAM, Parallel, 5V Supply Voltage, 28-DIP Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608B-PG Cypress Semiconductor IC MEMORY Original PDF
    FM1608B-SG Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 64KBIT 70NS 28SOIC Original PDF
    FM1608B-SGTR Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 64KBIT 70NS 28SOIC Original PDF
    FM1608B-SGTR Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 64KBIT 70NS Original PDF
    FM1608S-180CI Ramtron International EEPROM Parallel Sync Original PDF
    FM1608S-180SI Ramtron International EEPROM Parallel Sync Original PDF

    FM1608 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		FM1608B 64-Kbit 64-Kbit 151-year 70-ns 130-ns PDF

    "Ferroelectric RAM"

    Abstract: FM1608S ferroelectric ram RAMTRON
    Text: FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


    Original     		FM1608S 536-Bit 180ns 320ns 28-Pin) 1608S "Ferroelectric RAM" ferroelectric ram RAMTRON PDF

    FM1608B-SG

    Abstract: AEC-Q100-002 MS-013 FM1608B
    Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit MS-013 FM1608B, 00002G FM1608B-SG A103700002G FM1608B-SG AEC-Q100-002 PDF

    FM1608

    Abstract: FM1608-120-PG MS-013 FM1608-120-S
    Text: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 28-pin FM1608-120-PG M071170085G FM1608 FM1608-120-PG MS-013 FM1608-120-S PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 MS-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin MS-013 FM1608B, 00002G FM1608B-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin FM1608B, 00002G FM1608B-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		FM1608 28-pin MS-011 MS-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit FM1608B, 00002G FM1608B-SG A103700002G PDF

    FM1608

    Abstract: FM1608-120-P FM1608-120-S MS-011 MS-013
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		FM1608 FM1608 64-kilobit MS-011 FM1608-120-P FM1608-120-S MS-011 MS-013 PDF

    FM1608-120-SG

    Abstract: fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 28-pin 70085G FM1608-120-PG M071170085G FM1608-120-SG fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg PDF

    FM1608B-PG

    Abstract: No abstract text available
    Text: FM1608B PDIP 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention @ +75 C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin FM1608B 64-kilobit FM1608B-PG PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 FM1608 64-kilobit MS-011 PDF

    FM16W08

    Abstract: FM1608B FM1608 FM1608-120-PG MS-013 FM1608-120-SG SRAM 8KX8
    Text: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 FM1608B, FM16W08. FM16W08 FM1608B FM1608 FM1608-120-PG MS-013 FM1608-120-SG SRAM 8KX8 PDF

    fram

    Abstract: FM1808 FM1608 FM18L08
    Text: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used


    Original     		FM1608 FM1808 FM18L08 32Kx8 545-FRAM, fram PDF

    1608

    Abstract: FM1608 FM1608-120-P FM1608-120-S MS-011 MS-013
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		FM1608 FM1608 64-kilobit MS-011 1608 FM1608-120-P FM1608-120-S MS-011 MS-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    FM1608

    Abstract: FM1608-120-P FM1608-120-S
    Text: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write


    OCR Scan     		FM1608 FM1608 FM1608-120-P FM1608-120-S PDF

    ram DS1225

    Abstract: DS1225 related circuit of 74HC138 74HC138 FR-H1
    Text: Replacing A Dallas Semiconductor DS1225 With FRAM Memory F ^ 3 M T R O f \J iia u s ! 'in \ » ‘n il active and onK K Op\ w h c i ; standby n o d e I n' small ba tte n -p o w e re d systems. this difference can R am tron's FM1608S 8 k xX ferroelei i a r.ii'dum .:i, css T e n io n


    OCR Scan     		FM1608S DS1225 80C51 74HC138 74HC32 FM1608S 74HC373 ram DS1225 related circuit of 74HC138 FR-H1 PDF

    XLU2

    Abstract: No abstract text available
    Text: r ^ M $ T R FM1608SFRAM Memory O N 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Preliminary Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8 ,1 9 2 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells


    OCR Scan     		FM1608SFRAM® 536-Bit 180ns 320ns CM09TTL FM1608Sis 1608S XLU2 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


    OCR Scan     		FM1608S 536-Bit 180ns 320ns 1608S 28-Pin) 1608S 7SS501S PDF

    12FM160

    Abstract: No abstract text available
    Text: FM1608 |n a M iR Q N 64Kb Bytewide FRAM M emory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • • • • O rganized as 8,192 x 8 bits H igh endurance 10 B illion 1 0 io read/w rites 10 year data retention at 55° C N oD elay write


    OCR Scan     		FM1608 28-pin 12FM160 PDF

    Ferroelectric RAM

    Abstract: No abstract text available
    Text: r^ M T R O N FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features I 10 Year Data Retention without Power I Single 5 Volt ±10% Supply I Low Power Consumption - Active Current: 25mA - Standby Current: 50|iA I CMO&TTL Compatible I/O Pins


    OCR Scan     		180ns 320ns FM1608S 536-Bit 1608S Ferroelectric RAM PDF