FQAF30N40 Search Results

FQAF30N40 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQAF30N40		Fairchild Semiconductor	QFET N-CHANNEL		Original	PDF
FQAF30N40		Fairchild Semiconductor	QFET N-CHANNEL		Scan	PDF

FQAF30N40 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO-3PF package Abstract: FQAF30N40 Text: QFET N-CHANNEL FQAF30N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •	Original	PDF	FQAF30N40 TO-3PF package FQAF30N40
Untitled Abstract: No abstract text available Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •	OCR Scan	PDF	FQAF30N40
FQAF30N40 Abstract: VDD-320V Scans-0028136 Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V Advanced New Design R D S O N Avalanche Rugged Technology = 0.14Î2 lD = 19A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 90nC (Typ.)	OCR Scan	PDF	FQAF30N40 FQAF30N40 VDD-320V Scans-0028136

Catalog Datasheet

MFG & Type

PDF

Document Tags

TO-3PF package

Abstract: FQAF30N40
Text: QFET N-CHANNEL FQAF30N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •

Original

PDF

FQAF30N40 TO-3PF package FQAF30N40

Untitled

Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •

OCR Scan

PDF

FQAF30N40

Abstract: VDD-320V Scans-0028136
Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V Advanced New Design R D S O N Avalanche Rugged Technology = 0.14Î2 lD = 19A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 90nC (Typ.)