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    FQI5N60 Search Results

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    FQI5N60 Price and Stock

    Rochester Electronics LLC FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Bulk 350
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    onsemi FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Tube 1,000
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    Rochester Electronics FQI5N60CTU 3,123 1
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    TME FQI5N60CTU 1
    • 1 $1.43
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    Flip Electronics FQI5N60CTU 4,000
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    Aptina Imaging FQI5N60CTU

    Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) I2PAK Tube
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    Verical FQI5N60CTU 2,000 387
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    FQI5N60CTU 980 387
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    Fairchild Semiconductor Corporation FQI5N60CTU

    Power Field-Effect Transistor, 4.5A, 600V, 2.5ohm, N-Channel, MOSFET, TO-262AA
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    Rochester Electronics FQI5N60CTU 35,688 1
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    FQI5N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI5N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQI5N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQI5N60C Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQI5N60CTU Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQI5N60CTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4.5A I2PAK Original PDF

    FQI5N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQI5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Ω Features Description • 4.5 A, 600 V, RDS on = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		PDF FQI5N60C

    FQB5N60C

    Abstract: FQI5N60C
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60C / FQI5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C

    FQB5N60

    Abstract: FQI5N60
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQI5N60

    NS4290

    Abstract: FQB5N60C FQI5N60C
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C NS4290 FQI5N60C

    DATE CODE FAIRCHILD

    Abstract: No abstract text available
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C FQI5N60CTU DATE CODE FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQB5N60TM O-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    Original     		PDF FQB5N60, FQI5N60 FQB5N60

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQI5N60TU O-262 FQI5N60

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    fairchild mosfet selection guide

    Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics


    Original     		PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQB5N60

    Abstract: FQI5N60
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V Advanced New Design R D S O N = 2 0 i 2 Avalanche Rugged Technology lD = 5.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)


    OCR Scan     		PDF FQB5N60, FQI5N60 B5N60, D2PAK/TO-263 PAK/TO-263 FQB5N60 FQI5N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    OCR Scan     		PDF FQB5N60, FQI5N60 D2PAK/TO-263 D2PAK/TO-263