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    Untitled

    Abstract: No abstract text available
    Text: FRL9430D3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)


    Original     		PDF FRL9430D3

    Untitled

    Abstract: No abstract text available
    Text: FRL9430D2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)


    Original     		PDF FRL9430D2

    FRL9430

    Abstract: No abstract text available
    Text: HARRIS SEMICON] SECTOR MDE D fgi H A R R I S • RCA • • GE 43D2271 D033731 □ • HAS OBJECTIVE S E M I C O N D U C T O R HARRIS H —— INTERSIL FRL9430D 1A ,-5 0 0 V RDS on)=7.60n This Objective Data Sheet Represents the Proposed Device Performance.


    OCR Scan     		PDF 43D2271 D033731 FRL9430D L9430D 205AF FRL9430