Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FSJ9055R Search Results

    FSJ9055R Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSJ9055R Intersil 55A, -60V, 0.029 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9055R1 Intersil 55A, -60V, 0.029 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9055R3 Intersil 55A, -60V, 0.029 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9055R4 Intersil 55A, -60V, 0.029 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSJ9055R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2E12

    Abstract: FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1
    Text: FSJ9055D, FSJ9055R Semiconductor 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSJ9055D, FSJ9055R O-254AA MIL-S-19500 2E12 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ9055D, FSJ9055R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs November 1997 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSJ9055D, FSJ9055R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSJ9055D, FSJ9055R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSJ9055D, FSJ9055R MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264