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    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5786M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Ta = 25°C Sym bol Value C onditions U n it NPN Storage Tem perature T s Junction Tem perature Ti Collector to Base Voltage


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    FT5753M

    Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
    Text: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or


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    FT5769M

    Abstract: NPN 337 FT5764M FT5755M FT5753M FT5756M ft5760m PNP DARLINGTON ARRAYS FT5754 FT5754M
    Text: Section 3 Darlington Transistor Arrays — A t a Glance Maximum Ratings V c e o V lc(A> Pag« D *v lC * C aa«(n«) Polarity 3 -9 FT5753M FT5756M R M -£ 5 NPN NPN 100 100 ±1.5 ±1-5 3-11 FT5754M FT5757M R M -6 5 NPN NPN 100 100 ±3 ±3 3-13 FT5755M FT5750M


    OCR Scan     		FT5753M FT5756M FT5754M FT5757M FT5755M FT5750M FT5759M FT5760M FT5761M FT5763M FT5769M NPN 337 FT5764M PNP DARLINGTON ARRAYS FT5754 PDF