CMOS Process Family
Abstract: st 9701
Text: 5 Micron CMOS Process Family Process parameters Features • Double Poly / Single Metal 5µm 12 volts Units Metal I pitch width/space 5/5 µm Poly pitch (width/space) 5/5 µm Contact 5x5 µm Via 5x5 µm 5 µm P-well junction depth 6.3 µm N+ junction depth
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 5 Micron CMOS Process Family Process parameters Features • Double Poly / Single Metal 5µm 12 volts Units Metal I pitch width/space 5/5 µm Poly pitch (width/space) 5/5 µm Contact 5x5 µm Via 5x5 µm 5 µm P-well junction depth 6.3 µm N+ junction depth
|
Original
|
PDF
|
|
FT5000AP-8
Abstract: TF 350 C CR20EY-8 FT150QEY-24 okuma
Text: • H IG H POWER FOR GENERAL USE Max. ratings Type No. FT1000A-50 FT1000BV-80 FT1500CH-54 FTI50@DL.-28 FT1500DV-80 FT1500GV-80 FT1500AU-240 FT2500BH-56 FT2500CL-24 FT5000AP-8 *i *» 2 * 1 : Current type inverter thyristor Repetitivepuk ré parawitagiftepefc"
|
OCR Scan
|
PDF
|
FTIOOOCY-24
FT1500EX-24
FT150QEY-24
FT5000AP-8
TF 350 C
CR20EY-8
FT150QEY-24
okuma
|
MC1407
Abstract: AN716
Text: MOTOROLA SC 14E 0 LOGIC | l 3L7252 00Ô2M31 ^ | MC14549B MC14559B MOTOROLA CMOS MSI ‘ LO W -P O W ER C O M P L E M E N T A R Y M O S SUCCESSIVE APPROXIMATION REGISTERS SU CCESSIVE APPROXIM ATION R E G IST ER S T h e MC14549B and MC14559B successive approximation registers
|
OCR Scan
|
PDF
|
3L7252
MC14549B
MC14559B
MC14559B
MC1408/
MC1407
AN716
|