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    FTN035N60

    Abstract: No abstract text available
    Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：


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